(PDF) Q62702-C1138 Datasheet - NPN Silicon Darlington Transistors (High current gain High collector current)

Número de pieza	Q62702-C1138
Descripción	NPN Silicon Darlington Transistors (High current gain High collector current)
Fabricantes	Siemens Semiconductor Group
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No Preview Available ! NPN Silicon Darlington Transistors q High current gain q High collector current BC 617 BC 618 BC 617 BC 618 2 3 1 Type BC 617 BC 618 Marking – Ordering Code Q62702-C1137 Q62702-C1138 Pin Configuration 123 CBE Package1) TO-92 Maximum Ratings Parameter Collector-emitter voltage Collector-base voltage Emitter-base voltage Collector current Peak collector current Base current Peak base current Total power dissipation, TC = 66 ˚C Junction temperature Storage temperature range Thermal Resistance Junction - ambient Junction - case2) Symbol VCE0 VCB0 VEB0 IC ICM IB IBM Ptot Tj Tstg Values BC 617 BC 618 40 55 50 80 12 500 800 100 200 625 150 – 65 … + 150 Unit V mA mW ˚C Rth JA Rth JC ≤ 200 ≤ 135 K/W 1) For detailed information see chapter Package Outlines. 2) Mounted on Al heat sink 15 mm × 25 mm × 0.5 mm. Semiconductor Group 1 5.91 1 page DC current gain hFE = f (IC) BC 617 BC 618 Capacitance C = f (VEB, VCB) Semiconductor Group 5 5 Page

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PDF Q62702-C1138 Data sheet ( Hoja de datos )