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Número de pieza | Q62702-A1270 | |
Descripción | Silicon RF Switching Diode Preliminary data (Design for use in shunt configuration High shunt signal isolation Low shunt insertion loss) | |
Fabricantes | Siemens Semiconductor Group | |
Logotipo | ||
Hay una vista previa y un enlace de descarga de Q62702-A1270 (archivo pdf) en la parte inferior de esta página. Total 4 Páginas | ||
No Preview Available ! Silicon RF Switching Diode
Preliminary data
• Design for use in shunt configuration
• High shunt signal isolation
• Low shunt insertion loss
BAR 81W
3
4
2
1 VPS05605
Type
BAR 81W
Marking Ordering Code Pin Configuration
Package
BBs Q62702-A1270 1 = A1 2 = C2 3 = A2 4 = C1 SOT-343
Maximum Ratings
Parameter
Diode reverse voltage
Forward current
Total power dissipation, TS = 138 °C
Junction temperature
Operating temperature range
Storage temperature
Thermal Resistance
Junction - ambient 1)
Junction - soldering point
Symbol
VR
IF
Ptot
Tj
Top
Tstg
RthJA
RthJS
Value
30
100
100
150
-55 ...+125
-55 ...+150
Unit
V
mA
mW
°C
°C
≤ 200
≤ 120
K/W
1) Package mounted on alumina 15mm x 16.7mm x 0.7mm
SSeemmicioconndduuctcotor rGGrorouupp
11
Sep-109498-1-1919-081
1 page |
Páginas | Total 4 Páginas | |
PDF Descargar | [ Datasheet Q62702-A1270.PDF ] |
Número de pieza | Descripción | Fabricantes |
Q62702-A1270 | Silicon RF Switching Diode Preliminary data (Design for use in shunt configuration High shunt signal isolation Low shunt insertion loss) | Siemens Semiconductor Group |
Q62702-A1271 | Silicon Schottky Diodes (For mixer applications in the VHF / UHF range For high-speed switching applications) | Siemens Semiconductor Group |
Q62702-A1272 | Silicon Schottky Diodes (For mixer applications in the VHF / UHF range For high-speed switching applications) | Siemens Semiconductor Group |
Q62702-A1273 | Silicon Schottky Diodes (For mixer applications in the VHF / UHF range For high-speed switching applications) | Siemens Semiconductor Group |
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