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Número de pieza | Q62702-A1160 | |
Descripción | Silicon Schottky Diodes (For low-loss/ fast-recovery/ meter protection/ bias isolation and clamping applications Integrated diffused guard ring) | |
Fabricantes | Siemens Semiconductor Group | |
Logotipo | ||
Hay una vista previa y un enlace de descarga de Q62702-A1160 (archivo pdf) en la parte inferior de esta página. Total 6 Páginas | ||
No Preview Available ! BAT 64...W
Silicon Schottky Diodes
• For low-loss, fast-recovery, meter protection,
bias isolation and clamping applications
• Integrated diffused guard ring
• Low forward voltage
3
BAT 64W
BAT 64-04W
BAT 64-05W BAT 64-06W
2
1
VSO05561
ESD: Electrostatic discharge sensitive device, observe handling precaution!
Type
Marking Ordering Code Pin Configuration
Package
BAT 64W
63s
Q62702-A1159
1 = A 2 n.c. 3 = C SOT-323
BAT 64-04W 64s
Q62702-A1160
1 = A1 2 = C2 3 = C1/A2
BAT 64-05W 65s
Q62702-A1161
1 = A1 2 = A2 3 = C1/2
BAT 64-06W 66s
Q62702-A1162
1 = C1 2 = C2 3 = A1/2
Maximum Ratings
Parameter
Symbol
Diode reverse voltage
Forward current
Average forward current (50/60Hz, sinus)
Surge forward current (t< 100µs)
Total power dissipation BAT 64W , TS≤120°C
Total power dissipat. BAT64-04/06W , TS≤111°C
Total power dissipation BAR 64-05W , TS≤104°C
Junction temperature
Storage temperature
VR
IF
IFAV
IFSM
Ptot
Ptot
Ptot
Tj
Tstg
Value
40
250
120
800
250
250
250
150
-55...+150
Unit
V
mA
mW
°C
SSeemmicioconndduuctcotor rGGrorouupp
11
Sep-109798-1-1919-081
1 page BAT 64...W
Forward current IF = f (TA*; TS)
* Package mounted on epoxy
BAT 64-04/06W
300
mA
200
TS
TA
150
100
50
0
0
20 40 60 80 100 120 °C 150
TA,TS
Permissible Pulse Load RthJS = f (tp)
Permissible Pulse Load IFmax / IFDC = f (tp)
BAT 64-04/06
10 3
K/W
BAT 64-04/06W
10 2
10 2
10 1
0.5
0.2
0.1
0.05
10 0
0.02
0.01
0.005
D=0
-
D=0
0.005
0.01
0.02
10 1 0.05
0.1
0.2
0.5
10
-1
10
-6
10 -5
10 -4
10 -3
10 -2
SSeemmicioconndduuctcotor rGGrorouupp
s 10 0
tp
55
10
0
10
-6
10 -5
10 -4
10 -3
10 -2
s 10 0
tp
Sep-109798-1-1919-081
5 Page |
Páginas | Total 6 Páginas | |
PDF Descargar | [ Datasheet Q62702-A1160.PDF ] |
Número de pieza | Descripción | Fabricantes |
Q62702-A1160 | Silicon Schottky Diodes (For low-loss/ fast-recovery/ meter protection/ bias isolation and clamping applications Integrated diffused guard ring) | Siemens Semiconductor Group |
Q62702-A1161 | Silicon Schottky Diodes (For low-loss/ fast-recovery/ meter protection/ bias isolation and clamping applications Integrated diffused guard ring) | Siemens Semiconductor Group |
Q62702-A1162 | Silicon Schottky Diodes (For low-loss/ fast-recovery/ meter protection/ bias isolation and clamping applications Integrated diffused guard ring) | Siemens Semiconductor Group |
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