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PDF R1LP0408C Data sheet ( Hoja de datos )
| Número de pieza | R1LP0408C | |
| Descripción | Wide Temperature Range Version 4 M SRAM (512-kword 8-bit) | |
| Fabricantes | Hitachi Semiconductor | |
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Features
Low cost
Low leakage
Low forward voltage drop
High current capability
R1200 THRU R2000
HIGH VOLTAGE SILICON RECTIFIER
Reverse Voltage - 1200 to 2000 Volts
Forward Current - 0.2 to 0.5 Ampere
Mechanical Data
Case: Molded plastic
Epoxy: UL94V-0 rate flame retardant
Lead: MIL-STD-202 method 208C guaranteed
Mounting Position: Any
Weight: 0.012 ounce, 0.335 gram
D IM E N S IO N S
inches
mm
DIM Note
Min.
Max.
Min.
Max.
A
0.165
0.205
4.2
5.2
B
0.079
0.106
2.0
2.7
C
0.028
0.034
0.71
0.86
D 1.000 - 25.40 -
Maximum Ratings and Electrical Characteristics
Ratings at 25 ambient temperature unless otherwise specified.
Single phase, half wave, 60Hz, resistive or inductive load.
For capacitive load, derate current by 20%.
Symbols
Maximum repetitive peak reverse voltage
Maximum RMS voltage
Maximum DC blocking voltage
Maximum average forward rectified current
0.375" (9.5mm) lead length at TA=50
Peak forward surge current
8.3mS single half sine-wave superimposed
on rated load (MIL-STD-750D 4066 method)
VRRM
VRMS
VDC
I(AV)
IFSM
Maximum instantaneous forward voltage at 0.5/0.2A DC
Maximum full load reverse current average, full cycle
0.375" (9.5mm) lead length at TL=75
Maximum DC reverse current
at rated DC blocking voltage
TTAA==12050
Typical junction capacitance (Note 1)
VF
IR(AV)
IR
CJ
Operating and storage temperature range
TJ, TSTG
Note:
(1) Measured at 1.0MHz and applied reverse voltage of 4.0 volts
R1200
1200
840
1200
R1500
1500
1050
1500
500
R1800
1800
1260
1800
30.0
2.0
30.0
5.0
50.0
30.0
-65 to +175
R2000
2000
1400
2000
200
3.0
Units
Volts
Volts
Volts
mAmps
Amps
Volts
A
A
F
1
1 page | ||
| Páginas | Total 2 Páginas | |
| PDF Descargar | [ Datasheet R1LP0408C.PDF ] | |
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