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PDF QSBT40 Data sheet ( Hoja de datos )

Número de pieza QSBT40
Descripción QUAD DATA LINE SCHOTTKY BUS TERMINATOR
Fabricantes Diodes Incorporated 
Logotipo Diodes Incorporated Logotipo



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QSBT40
QUAD DATA LINE SCHOTTKY BUS TERMINATOR
Features
· Low Forward Voltage Drop
· Fast Switching
· Very High Density
· Ultra-Small Surface Mount Package
· PN Junction Guard Ring for Transient and
ESD Protection
· Provide transient protection for high-speed data
lines in accordance with:
IEC61000-4-2 (ESD) 15kV (Air), 8kV (Contact)
IEC61000-4-4 (EFT) 80A (tp = 5/50 ns)
IEC61000-4-5 (Lightning) Class 3
K
A
TOP VIEW
G
H
BC
M
Mechanical Data
J
· Case: SOT-363, Molded Plastic
· Case material - UL Flammability Rating 94V-0
· Moisture sensitivity: Level 1 per J-STD-020A
· Terminals: Solderable per MIL-STD-202,
Method 208
· Polarity: See Diagram
· Weight: 0.006 grams (approx.)
· Marking Code: KST (See Page 2)
Maximum Ratings @ TA = 25°C unless otherwise specified
DF
L
DL1 VCC DL2
DL4 GND DL3
Characteristic
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
Forward Continuous Current (Note 1)
Non-Repetitive Peak Forward Surge Current @ t < 1.0s
Power Dissipation (Note 1)
Thermal Resistance Junction to Ambient Air (Note 1)
Operating Temperature Range
Storage Temperature Range
Symbol
VRRM
VRWM
VR
IFM
IFSM
Pd
RqJA
Tj
TSTG
Value
30
200
600
200
625
-55 to +125
-65 to +125
SOT-363
Dim Min Max
A 0.10 0.30
B 1.15 1.35
C 2.00 2.20
D 0.65 Nominal
F 0.30 0.40
H 1.80 2.20
J ¾ 0.10
K 0.90 1.00
L 0.25 0.40
M 0.10 0.25
a 0°
All Dimensions in mm
Unit
V
mA
mA
mW
°C/W
°C
°C
Electrical Characteristics @ TA = 25°C unless otherwise specified
Characteristic
Reverse Breakdown Voltage (Note 2)
Forward Voltage (Note 2)
Reverse Current (Note 2)
Total Capacitance (Note 3)
Reverse Recovery Time
Symbol Min
V(BR)R
30
VF ¾
IR ¾
CT ¾
trr ¾
Typ
¾
¾
¾
10.0
¾
Max
¾
280
350
450
550
1000
2
¾
5.0
Unit
V
mV
mA
pF
ns
Test Condition
IR = 100mA
IF = 0.1mA, tp < 300µS
IF = 1.0mA, tp < 300µS
IF = 10mA, tp < 300µS
IF = 30mA, tp < 300µS
IF = 100mA, tp < 300µS
VR = 25V
VR = 0, f = 1.0MHz
IF = IR = 10mA,
Irr = 0.1 x IR, RL = 100W
Notes: 1. Device mounted on FR-4 PCB, 1 inch x 0.85 inch x 0.062 inch; pad layout as shown on Diodes Inc. suggested pad layout
document AP02001, which can be found on our website at http://www.diodes.com/datasheets/ap02001.pdf.
2. Short duration test pulse used to minimize self-heating effect.
3. At VR= 0V, DL(X) to VCC or GND.
DS30195 Rev. 7 - 2
1 of 2
QSBT40
www.diodes.com

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