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PDF QM75DY-HB Data sheet ( Hoja de datos )
| Número de pieza | QM75DY-HB | |
| Descripción | HIGH POWER SWITCHING USE INSULATED TYPE | |
| Fabricantes | Mitsubishi Electric Semiconductor | |
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QM75DY-HB
MITSUBISHI TRANSISTOR MODULES
QM75DY-HB
HIGH POWER SWITCHING USE
INSULATED TYPE
• IC Collector current .......................... 75A
• VCEX Collector-emitter voltage ........... 600V
• hFE DC current gain............................. 750
• Insulated Type
• UL Recognized
Yellow Card No. E80276 (N)
File No. E80271
APPLICATION
Inverters, Servo drives, UPS, DC motor controllers, NC equipment, Welders
OUTLINE DRAWING & CIRCUIT DIAGRAM
Dimensions in mm
94
80
20 20 20
3–M5
C2E1
E2
C1
2–φ6.5
20 4 16 4
7
20 Tab#110, t=0.5
LABEL
C2E1
E2
B2
E2
C1
E1
B1
Feb.1999
1 page  
MITSUBISHI TRANSISTOR MODULES
QM75DY-HB
MEDIUM POWER SWITCHING USE
INSULATED TYPE
RATED SURGE COLLECTOR REVERSE CURRENT
(DIODE FORWARD SURGE CURRENT)
800
700
600
500
400
300
200
100
0
10 0 2 3 4 5 7 10 1 2 3 4 5 7 10 2
CONDUCTION TIME (CYCLES AT 60Hz)
TRANSIENT THERMAL IMPEDANCE
CHARACTERISTIC (DIODE)
10 0 2 3 4 5 710 1 2 3 4 5 7
2.0
1.6
1.2
0.8
0.4
0
10 –3 2 3 4 5 710 –2 2 3 4 5 7 10 –12 3 4 5 7 10 0
TIME (s)
REVERSE RECOVERY CHARACTERISTICS
OF FREE-WHEEL DIODE (TYPICAL)
10 2
7 Tj=25°C
5 Tj=125°C
3
2
10 2
Irr
10 1 Qrr 10 1
7
5
3
2
10 0 10 0
7
5
trr
3 VCC=300V
2 IB1=150mA
10 –1
IB2=–1.5A 10 –1
10 0 2 3 4 5 710 1 2 3 4 5 7 10 2 2 3 4 5 7 10 3
FORWARD CURRENT IF (A)
Feb.1999
5 Page | ||
| Páginas | Total 5 Páginas | |
| PDF Descargar | [ Datasheet QM75DY-HB.PDF ] | |
Hoja de datos destacado
| Número de pieza | Descripción | Fabricantes |
| QM75DY-H | HIGH POWER SWITCHING USE INSULATED TYPE | Mitsubishi Electric Semiconductor |
| QM75DY-HB | HIGH POWER SWITCHING USE INSULATED TYPE | Mitsubishi Electric Semiconductor |
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