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PDF QM50TB-2H Data sheet ( Hoja de datos )
| Número de pieza | QM50TB-2H | |
| Descripción | MEDIUM POWER SWITCHING USE INSULATED TYPE | |
| Fabricantes | Mitsubishi Electric Semiconductor | |
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QM50TB-2H
MITSUBISHI TRANSISTOR MODULES
QM50TB-2H
MEDIUM POWER SWITCHING USE
INSULATED TYPE
• IC Collector current .......................... 50A
• VCEX Collector-emitter voltage ......... 1000V
• hFE DC current gain............................... 75
• Insulated Type
• UL Recognized
Yellow Card No. E80276 (N)
File No. E80271
APPLICATION
Inverters, Servo drives, DC motor controllers, NC equipment, Welders
OUTLINE DRAWING & CIRCUIT DIAGRAM
Dimensions in mm
7–M4
102±0.5
6 14 6 14 6 17
4–φ5.5
BuP EuP BvP EvP BwPEwP
P BuN EuN BvN EvN BwN EwN
P
UVW
N
N 10
2
22 20 20 22
80±0.25
11
LABEL
BuP
P EuP
BuN
EuN
U
N
BvP
EvP
BvN
EvN
V
BwP
EwP
BwN
EwN
W
P
N
Tab#110, t=0.5
Note: All Transistor Units are 3-Stage Darlingtons.
Feb.1999
1 page  
RATED SURGE COLLECTOR REVERSE CURRENT
(DIODE FORWARD SURGE CURRENT)
500
400
300
200
100
0
10 0 2 3 4 5 7 10 1 2 3 4 5 7 10 2
CONDUCTION TIME (CYCLES AT 60Hz)
TRANSIENT THERMAL IMPEDANCE
CHARACTERISTIC (DIODE)
10 0 2 3 4 5 710 1 2 3 4 5
2.0
1.8
1.6
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0
10 –3 2 3 4 5 710 –22 3 4 5 710 –1 2 3 4 5 7 10 0
TIME (s)
MITSUBISHI TRANSISTOR MODULES
QM50TB-2H
MEDIUM POWER SWITCHING USE
INSULATED TYPE
REVERSE RECOVERY CHARACTERISTICS
OF FREE-WHEEL DIODE (TYPICAL)
10 2
7
5
3
2
10 1 Irr
7
5
Tj=25°C
Tj=125°C
VCC=600V
IB1=–IB2=1A
10 2
10 1
3
2
10 0 Qrr
7
5
10 0
3
2 trr
10 –1
10 –1
10 0 2 3 4 5 7 10 1 2 3 4 5 7 10 2 2 3 4 5 7 10 3
FORWARD CURRENT IF (A)
Feb.1999
5 Page | ||
| Páginas | Total 5 Páginas | |
| PDF Descargar | [ Datasheet QM50TB-2H.PDF ] | |
Hoja de datos destacado
| Número de pieza | Descripción | Fabricantes |
| QM50TB-24 | MEDIUM POWER SWITCHING USE INSULATED TYPE | Mitsubishi Electric Semiconductor |
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| QM50TB-2H | MEDIUM POWER SWITCHING USE INSULATED TYPE | Mitsubishi Electric Semiconductor |
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