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PDF QM200DY-HB Data sheet ( Hoja de datos )
| Número de pieza | QM200DY-HB | |
| Descripción | HIGH POWER SWITCHING USE INSULATED TYPE | |
| Fabricantes | Mitsubishi Electric Semiconductor | |
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QM200DY-HB
MITSUBISHI TRANSISTOR MODULES
QM200DY-HB
HIGH POWER SWITCHING USE
INSULATED TYPE
• IC Collector current ........................ 200A
• VCEX Collector-emitter voltage ........... 600V
• hFE DC current gain............................. 750
• Insulated Type
• UL Recognized
Yellow Card No. E80276 (N)
File No. E80271
APPLICATION
Inverters, Servo drives, DC motor controllers, NC equipment, Welders
OUTLINE DRAWING & CIRCUIT DIAGRAM
Dimensions in mm
14 3-M6
B2X
58
C2E1
E2
C1
B2
E2
85
E1
B1
23.5
23 23
93
108
18 5 18 5 18
φ6.5
Tab#110, t=0.5
LABEL
B2X
C2E1
B1X
E2
B2
E2
C1
E1
B1
Feb.1999
1 page  
RATED SURGE COLLECTOR REVERSE CURRENT
(DIODE FORWARD SURGE CURRENT)
2000
1600
1200
800
400
0
10 0 2 3 4 5 7 10 1 2 3 4 5 7 10 2
CONDUCTION TIME (CYCLES AT 60Hz)
TRANSIENT THERMAL IMPEDANCE
CHARACTERISTIC (DIODE)
10 0 2 3 4 5 710 1 2
0.40
0.32
0.24
0.16
0.08
0
10 –3 2 3 4 5 710 –2 2 3 4 5 710 –1 2 3 4 5 7 10 0
TIME (s)
MITSUBISHI TRANSISTOR MODULES
QM200DY-HB
HIGH POWER SWITCHING USE
INSULATED TYPE
REVERSE RECOVERY CHARACTERISTICS
OF FREE-WHEEL DIODE (TYPICAL)
33
2
10 2
7 Irr
5
4 Qrr
3
2 trr
10 1
7
5
4
3
10 1
2 3 4 5 7 102
10 0
VCC=300V
IB1=400mA 10 –1
IB2=–4A
Tj=25°C
Tj=125°C
3
2 3 4 5 7 103
FORWARD CURRENT IF (A)
Feb.1999
5 Page | ||
| Páginas | Total 5 Páginas | |
| PDF Descargar | [ Datasheet QM200DY-HB.PDF ] | |
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| Número de pieza | Descripción | Fabricantes |
| QM200DY-HB | HIGH POWER SWITCHING USE INSULATED TYPE | Mitsubishi Electric Semiconductor |
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