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PDF QM200DY-24 Data sheet ( Hoja de datos )
| Número de pieza | QM200DY-24 | |
| Descripción | HIGH POWER SWITCHING USE INSULATED TYPE | |
| Fabricantes | Mitsubishi Electric Semiconductor | |
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QM200DY-24
MITSUBISHI TRANSISTOR MODULES
QM200DY-24
HIGH POWER SWITCHING USE
INSULATED TYPE
• IC Collector current ........................ 200A
• VCEX Collector-emitter voltage ......... 1200V
• hFE DC current gain............................... 75
• Insulated Type
• UL Recognized
Yellow Card No. E80276 (N)
File No. E80271
APPLICATION
Inverters, Servo dvives, DC motor controllers, NC equipment, Welders
OUTLINE DRAWING & CIRCUIT DIAGRAM
Dimensions in mm
113
25 25
21.5
B2X
5.5
4–φ6.5
C2E1 E2
C1
93
8
C2E1
B1X
3–M6
Tab#110, t=0.5
17 8 17 8 17
LABEL
B2
E2
C1
E2
E1
B1
Feb.1999
1 page  
RATED SURGE COLLECTOR REVERSE CURRENT
(DIODE FORWARD SURGE CURRENT)
2000
1600
1200
800
400
0
10 0 2 3 4 5 7 10 1 2 3 4 5 7 10 2
CONDUCTION TIME (CYCLES AT 60Hz)
TRANSIENT THERMAL IMPEDANCE
CHARACTERISTIC (DIODE)
10 0 2 3 4 5 710 1 2 3 4 5 7
0.40
0.32
0.24
0.16
0.08
0
10 –3 2 3 4 5 710 –2 2 3 4 5 710 –1 2 3 4 5 7 10 0
TIME (s)
MITSUBISHI TRANSISTOR MODULES
QM200DY-24
HIGH POWER SWITCHING USE
INSULATED TYPE
REVERSE RECOVERY CHARACTERISTICS
OF FREE-WHEEL DIODE (TYPICAL)
10 3
7
5
Tj=25°C
Tj=125°C
3 VCC=600V
2 IB1=–IB2=4A
10 2
7
5
3
2
10 2
Irr
10 1
Qrr
101 100
7
5 trr
3
2
100 10 –1
100 2 3 4 5 7101 2 3 4 5 7 102 2 3 45 7 103
FORWARD CURRENT IF (A)
Feb.1999
5 Page | ||
| Páginas | Total 5 Páginas | |
| PDF Descargar | [ Datasheet QM200DY-24.PDF ] | |
Hoja de datos destacado
| Número de pieza | Descripción | Fabricantes |
| QM200DY-24 | HIGH POWER SWITCHING USE INSULATED TYPE | Mitsubishi Electric Semiconductor |
| QM200DY-24B | HIGH POWER SWITCHING USE INSULATED TYPE | Mitsubishi Electric Semiconductor |
| QM200DY-2H | HIGH POWER SWITCHING USE INSULATED TYPE | Mitsubishi Electric Semiconductor |
| QM200DY-2HB | HIGH POWER SWITCHING USE INSULATED TYPE | Mitsubishi Electric Semiconductor |
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