(PDF) QM100HC-M Datasheet - HIGH POWER SWITCHING USE NON-INSULATED TYPE

Número de pieza	QM100HC-M
Descripción	HIGH POWER SWITCHING USE NON-INSULATED TYPE
Fabricantes	Mitsubishi Electric Semiconductor
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No Preview Available ! QM100HC-M MITSUBISHI TRANSISTOR MODULES QM100HC-M HIGH POWER SWITCHING USE NON-INSULATED TYPE • IC Collector current ........................ 100A • VCEX Collector-emitter voltage ........... 350V • hFE DC current gain............................. 100 • Non-Insulated Type APPLICATION Robotics, Forklifts, Welders OUTLINE DRAWING & CIRCUIT DIAGRAM 53.5 43.3 33 88 B E φ5.3 10.5 R6 M5 LABEL Dimensions in mm C B E Feb.1999 1 page RATED SURGE COLLECTOR REVERSE CURRENT (DIODE FORWARD SURGE CURRENT) 1000 800 600 400 200 0 10 0 2 3 4 5 7 10 1 2 3 4 5 7 10 2 CONDUCTION TIME (CYCLES AT 60Hz) TRANSIENT THERMAL IMPEDANCE CHARACTERISTIC (DIODE) 10 0 2 3 45 7 10 1 1.0 0.8 0.6 0.4 0.2 0 10 –3 2 3 4 5 710–2 2 3 4 5 710–1 2 3 4 5 7 10 0 TIME (s) MITSUBISHI TRANSISTOR MODULES QM100HC-M HIGH POWER SWITCHING USE NON-INSULATED TYPE REVERSE RECOVERY CHARACTERISTICS OF FREE-WHEEL DIODE (TYPICAL) 10 2 7 VCC=200V IB1=–IB2=2A 5 4 Tj=25°C Tj=125°C 3 2 10 1 10 1 7 5 4 3 2 10 0 10 0 Irr Qrr 10 0 trr 10 –1 2 3 4 5 7 101 2 3 4 5 7 102 FORWARD CURRENT IF (A) Feb.1999 5 Page

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PDF QM100HC-M Data sheet ( Hoja de datos )