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PDF PBSS5350D Data sheet ( Hoja de datos )
| Número de pieza | PBSS5350D | |
| Descripción | PNP transistor | |
| Fabricantes | NXP Semiconductors | |
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PBSS5350D
50 V, 3 A PNP low VCEsat (BISS) transistor
Rev. 6 — 28 June 2011
Product data sheet
1. Product profile
1.1 General description
PNP low VCEsat Breakthrough In Small Signal (BISS) transistor in a small
SOT457 (SC-74) Surface-Mounted Device (SMD) plastic package.
NPN complement: PBSS4350D
1.2 Features and benefits
Low collector-emitter saturation
voltage VCEsat
High current capability
High efficiency due to less heat
generation
AEC-Q101 qualified
Smaller Printed-Circuit Board (PCB)
area than for conventional transistors
1.3 Applications
Supply line switching circuits
Battery management applications
DC-to-DC conversion
1.4 Quick reference data
Table 1.
Symbol
VCEO
IC
ICM
RCEsat
Quick reference data
Parameter
collector-emitter
voltage
collector current
peak collector current
collector-emitter
saturation resistance
Conditions
open base
IC = -2 A; IB = -200 mA; pulsed;
tp ≤ 300 µs; δ ≤ 0.02 ; Tamb = 25 °C
Min Typ Max Unit
- - -50 V
- - -3 A
- - -5 A
- 120 150 mΩ
1 page  
NXP Semiconductors
PBSS5350D
50 V, 3 A PNP low VCEsat (BISS) transistor
1000
hFE
800
600
400
200
mgw167
(1)
(2)
(3)
0
−10−1
−1
−10
−102
−103
−104
IC (mA)
VCE = -2 V
(1) Tamb = 150 °C
(2) Tamb = 25 °C
(3) Tamb = -55 °C
Fig 1. DC current gain as a function of collector
current; typical values
–5
IC
(A)
–4
IB (mA) = –250
–225
–200
–3
–2
006aac606
–150
–100
–175
–125
–75
–50
–25
–1
0
0.0 –0.4 –0.8 –1.2 –1.6 –2.0
VCE (V)
Tamb = 25 °C
Fig 3. Collector current as a function of
collector-emitter voltage; typical values
–1000
IC
(mA)
–800
–600
–400
–200
IB (nA) = –3.96
–3.30
–2.64
–1.98
–1.32
–0.66
–3.63
–2.97
–2.31
–1.65
–0.99
–0.33
006aac605
0
0.0 –0.4 –0.8 –1.2 –1.6 –2.0
VCE (V)
Tamb = 25 °C
Fig 2. Collector current as a function of
collector-emitter voltage; typical values
−1.2
VBE
(V)
−0.8
mgw168
(1)
(2)
−0.4
(3)
0
−10−1
−1
−10
−102
−103
−104
IC (mA)
VCE = -2 V
(1) Tamb = -55 °C
(2) Tamb = 25 °C
(3) Tamb = 150 °C
Fig 4. Base-emitter voltage as a function of collector
current; typical values
PBSS5350D
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 6 — 28 June 2011
© NXP B.V. 2011. All rights reserved.
5 of 12
5 Page 
NXP Semiconductors
PBSS5350D
50 V, 3 A PNP low VCEsat (BISS) transistor
Terms and conditions of commercial sale — NXP Semiconductors
products are sold subject to the general terms and conditions of commercial
sale, as published at http://www.nxp.com/profile/terms, unless otherwise
agreed in a valid written individual agreement. In case an individual
agreement is concluded only the terms and conditions of the respective
agreement shall apply. NXP Semiconductors hereby expressly objects to
applying the customer’s general terms and conditions with regard to the
purchase of NXP Semiconductors products by customer.
No offer to sell or license — Nothing in this document may be interpreted or
construed as an offer to sell products that is open for acceptance or the grant,
conveyance or implication of any license under any copyrights, patents or
other industrial or intellectual property rights.
Export control — This document as well as the item(s) described herein may
be subject to export control regulations. Export might require a prior
authorization from national authorities.
Non-automotive qualified products — Unless this data sheet expressly
states that this specific NXP Semiconductors product is automotive qualified,
the product is not suitable for automotive use. It is neither qualified nor tested
in accordance with automotive testing or application requirements. NXP
Semiconductors accepts no liability for inclusion and/or use of
non-automotive qualified products in automotive equipment or applications.
In the event that customer uses the product for design-in and use in
automotive applications to automotive specifications and standards, customer
(a) shall use the product without NXP Semiconductors’ warranty of the
product for such automotive applications, use and specifications, and (b)
whenever customer uses the product for automotive applications beyond
NXP Semiconductors’ specifications such use shall be solely at customer’s
own risk, and (c) customer fully indemnifies NXP Semiconductors for any
liability, damages or failed product claims resulting from customer design and
use of the product for automotive applications beyond NXP Semiconductors’
standard warranty and NXP Semiconductors’ product specifications.
11.4 Trademarks
Notice: All referenced brands, product names, service names and trademarks
are the property of their respective owners.
Adelante, Bitport, Bitsound, CoolFlux, CoReUse, DESFire, EZ-HV,
FabKey, GreenChip, HiPerSmart, HITAG, I²C-bus logo, ICODE, I-CODE,
ITEC, Labelution, MIFARE, MIFARE Plus, MIFARE Ultralight, MoReUse,
QLPAK, Silicon Tuner, SiliconMAX, SmartXA, STARplug, TOPFET,
TrenchMOS, TriMedia and UCODE — are trademarks of NXP B.V.
HD Radio and HD Radio logo — are trademarks of iBiquity Digital
Corporation.
12. Contact information
For more information, please visit: http://www.nxp.com
For sales office addresses, please send an email to: [email protected]
PBSS5350D
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 6 — 28 June 2011
© NXP B.V. 2011. All rights reserved.
11 of 12
11 Page | ||
| Páginas | Total 12 Páginas | |
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