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PDF PBSS4350S Data sheet ( Hoja de datos )
| Número de pieza | PBSS4350S | |
| Descripción | 50 V low VCEsat NPN transistor | |
| Fabricantes | NXP Semiconductors | |
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DISCRETE SEMICONDUCTORS
DATA SHEET
alfpage
M3D186
PBSS4350S
50 V low VCEsat NPN transistor
Product specification
2001 Nov 19
1 page  
Philips Semiconductors
50 V low VCEsat NPN transistor
Product specification
PBSS4350S
1200
handIbCook, halfpage
(mA)
1000
800
600
400
200
0
0 0.4 0.8 1.2
Tamb = 25 °C.
(1) IB = 3.96 nA.
(2) IB = 3.63 nA.
(3) IB = 3.30 nA.
(4) IB = 2.97 nA.
(5) IB = 2.64 nA.
(6) IB = 2.31 nA.
(7) IB = 1.98 nA.
(8) IB = 1.65 nA.
MLD762
(1)
(2)
(3)
(4)
(5)
(6)
(7)
(8)
(9)
(10)
(11)
(12)
1.6 2
VCE (V)
(9) IB = 1.32 nA.
(10) IB = 0.99 nA.
(11) IB = 0.66 nA.
(12) IB = 0.33 nA.
Fig.6 Collector current as a function of
collector-emitter voltage; typical values.
5
handbook, halfpage
IC
(A)
4
3
2
MLD763
(1) (2)
(3)
(4)
(5)
(6)
(7)
(8)
(9)
(10)
1
0
0 0.4 0.8 1.2
Tamb = 25 °C.
(1) IB = 150 mA.
(2) IB = 135 mA.
(3) IB = 120 mA.
(4) IB = 105 mA.
(5) IB = 90 mA.
(6) IB = 75 mA.
(7) IB = 60 mA.
(8) IB = 45 mA.
1.6 2
VCE (V)
(9) IB = 30 mA.
(10) IB = 15 mA.
Fig.7 Collector current as a function of
collector-emitter voltage; typical values.
103
handbook, halfpage
RCEsat
(Ω)
102
MLD764
10
1
10 −1
(1)
(2)
(3)
10 −2
10 −1
IC/IB = 20.
1
10 102 103 104
IC (mA)
(1) Tamb = 150 °C. (2) Tamb = 25 °C. (3) Tamb = −55 °C.
Fig.8 Collector-emitter equivalent on-resistance
as a function of collector current; typical
values.
2001 Nov 19
5
5 Page | ||
| Páginas | Total 8 Páginas | |
| PDF Descargar | [ Datasheet PBSS4350S.PDF ] | |
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