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PDF RC15S04G Data sheet ( Hoja de datos )
| Número de pieza | RC15S04G | |
| Descripción | SILICON GPP CELL RECTIFIER | |
| Fabricantes | Shanghai Sunrise Electronics | |
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SHANGHAI SUNRISE ELECTRONICS CO., LTD.
RC15S01G THRU RC15S10G
SILICON GPP
CELL RECTIFIER
VOLTAGE: 100 TO 1000V CURRENT: 15A
TECHNICAL
SPECIFICATION
FEATURES
• Glass passivated junction chip
• High surge capability
• Solderable electrode surfaces
• Ideal for hybrids
MECHANICAL DATA
• Polarity: Bottom or upper electrode denotes
cathode according to the notice in
in package
Dimensions in inches and (millimeters)
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
(Single-phase, half-wave, resistive or inductive load rating at 25oC, unless otherwise stated, for capacitive load, derate
current by 20%)
RATINGS
SYMBOL
RC15S
01G
RC15S
02G
RC15S
04G
RC15S
06G
RC15S
08G
RC15S
10G
UNITS
Maximum Repetitive Peak Reverse Voltage VRRM 100 200 400 600 800 1000 V
Maximum RMS Voltage
VRMS 70 140 280 420 560 700 V
Maximum DC Blocking Voltage
VDC 100 200 400 600 800 1000 V
Maximum Average Forward Rectified Current
(Ta=55oC)
(Note 2)
IF(AV)
15
A
Peak Forward Surge Current (8.3ms single
half sine-wave superimposed on rated load)
IFSM
400
A
Maximum Instantaneous Forward Voltage
(at rated forward current)
VF
Maximum DC Reverse Current
(at rated DC blocking voltage)
Ta=25oC
Ta=150oC
IR
Typical Junction Capacitance
(Note 1) CJ
Typical Thermal Resistance
(Note 3) Rθ(ja)
Storage and Operation Junction Temperature TSTG,TJ
Note:
1. Measured at 1 MHz and applied voltage of 4.0Vdc
2. When mounted to heat sink from body.
3. Thermal resistance from junction to ambient.
1.0
10
300
300
1
-50 to +150
V
µA
µA
pF
oC/W
oC
http://www.sse-diode.com
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| PDF Descargar | [ Datasheet RC15S04G.PDF ] | |
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