(PDF) RB481 Datasheet - Schottky Barrier Diode

Número de pieza	RB481
Descripción	Schottky Barrier Diode
Fabricantes	ROHM Semiconductor
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No Preview Available ! Diodes Schottky Barrier Diode RB481K RB481K !Applications Low current rectification !Features 1) Compact size. 2) High reliability. 3) Extremely low forward voltage. 4) This is a composite component and is ideal for reducing the number of components used. !Construction Silicon epitaxial planar !External dimensions (Units: mm) 1.25±0.1 0.6 0.65 0.3±0.1 0.2±0.1 (1) (4) 0.9±0.1 0.7 (2) (3) 0.2±0.1 0.2±0.1 0.65 0.65 1.25±0.1 2.0±0.2 0~0.1 0.15±0.05 (1) (4) ROHM : UMD4 EIAJ : SC - 82 (2) (3) !Absolute maximum ratings (Ta=25°C) Parameter Peak reverse voltage DC reverse voltage Mean rectifying current Peak forward surge current∗ Junction temperature Storage temperature ∗ 60 Hz for 1 Symbol VRM VR IO IFSM Tj Tstg Limits 30 30 0.2 1 125 −40~+125 Unit V V A A °C °C !Electrical characteristics (Ta=25°C unless otherwise noted) Parameter Forward voltage Reverse current Symbol VF1 VF2 VF3 VF4 IR Min. − − − − − Typ. 0.18 0.25 0.34 0.40 3.6 Max. 0.28 0.33 0.43 0.50 30 Unit Conditions V IF=1mA V IF=10mA V IF=100mA V IF=200mA µA VR=10V 1 page

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PDF RB481 Data sheet ( Hoja de datos )