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PDF RB411D Data sheet ( Hoja de datos )
| Número de pieza | RB411D | |
| Descripción | Schottky barrier diode | |
| Fabricantes | ROHM Semiconductor | |
| Logotipo |  |
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Data Sheet
Schottky Barrier Diode
RB411D
Applications
Low current rectification
Dimensions (Unit : mm)
Land size figure (Unit : mm)
1.9
Features
1) Small mold type. (SMD3)
2) Low IR
3) High reliability.
Construction
Silicon epitaxial planer
2.9±0.2
各リードとも
0.4 ＋－00..105 Eac同h 寸le法ad has same dimension
(3)
＋0.1
0 .15 －0.06
0.95
(2)
0.95
0.95
1.9±0.2
0.8MIN.
0～ 0.1
SMD3
(1)
0 .8±0 .1
1. 1±0. 2
0. 01
Structure
ROHM : SMD3
JEDEC :S0T-346
JEITA : SC-59
week code
Taping specifications (Unit : mm)
4.0±0.1
2.0±0.05
φ1 .5±0.1
0
0 .3±0.1
3.2 ±0.1
4 .0±0.1
φ1.05MIN
1.35±0.1
Absolute maximum ratings (Ta=25°C)
Parameter
Reverse voltage (repetitive peak)
Reverse voltage (DC)
Average rectified forward current(*1)
Forward current surge peak (60Hz / 1cyc)(*1)
Junction temperature
Storage temperature
(*1) Rating of per diode
Symbol
VRM
VR
Io
IFSM
Tj
Tstg
Limits
40
20
500
3
125
40 to 125
Unit
V
V
mA
A
°C
°C
Electrical characteristics (Ta=25°C)
Parameter
Forward voltage
Reverse current
Capacitance between terminals
Symbol Min. Typ. Max.
VF1 - - 0.50
VF2 - - 0.30
IR1 - - 30
Ct1 - 20 -
Unit Conditions
V IF=500mA
V IF=10mA
μA VR=10V
pF VR=10V , f=1MHz
www.rohm.com
© 2011 ROHM Co., Ltd. All rights reserved.
1/3
2011.04 - Rev.B
1 page | ||
| Páginas | Total 4 Páginas | |
| PDF Descargar | [ Datasheet RB411D.PDF ] | |
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