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PDF RA08H1317M-E01 Data sheet ( Hoja de datos )

Número de pieza RA08H1317M-E01
Descripción 135-175MHz 8W 12.5V PORTABLE/MOBILE RADIO
Fabricantes Mitsubishi Electric Semiconductor 
Logotipo Mitsubishi Electric Semiconductor Logotipo



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ELECTROSTATIC SENSITIVE DEVICE
OBSERVE HANDLING PRECAUTIONS
MITSUBISHI RF MOSFET MODULE
RA08H1317M
135-175MHz 8W 12.5V PORTABLE/MOBILE RADIO
DESCRIPTION
The RA08H1317M is a 8-watt RF MOSFET Amplifier Module
for 12.5-volt portable/ mobile radios that operate in the 135- to
175-MHz range.
The battery can be connected directly to the drain of the
enhancement-mode MOSFET transistors. Without the gate
voltage (VGG=0V), only a small leakage current flows into the drain
and the RF input signal attenuates up to 60 dB. The output power
and drain current increase as the gate voltage increases. With a
gate voltage around 2.5V (minimum), output power and drain
current increases substantially. The nominal output power
becomes available at 3V (typical) and 3.5V (maximum). At
VGG=3.5V, the typical gate current is 1 mA.
This module is designed for non-linear FM modulation, but may
also be used for linear modulation by setting the drain quiescent
current with the gate voltage and controlling the output power with
the input power.
FEATURES
• Enhancement-Mode MOSFET Transistors
(IDD0 @ VDD=12.5V, VGG=0V)
• Pout>8W @ VDD=12.5V, VGG=3.5V, Pin=20mW
ηT>40% @ Pout=8W (VGG control), VDD=12.5V, Pin=20mW
• Broadband Frequency Range: 135-175MHz
• Low-Power Control Current IGG=1mA (typ) at VGG=3.5V
• Module Size: 30 x 10 x 5.4 mm
• Linear operation is possible by setting the quiescent drain current
with the gate voltage and controlling the output power with the
input power
BLOCK DIAGRAM
2
3
14
5
1 RF Input (Pin)
2 Gate Voltage (VGG), Power Control
3 Drain Voltage (VDD), Battery
4 RF Output (Pout)
5 RF Ground (Case)
ORDERING INFORMATION:
ORDER NUMBER
RA08H1317M-E01
RA08H1317M-01
(Japan - packed without desiccator)
SUPPLY FORM
Antistatic tray,
25 modules/tray
RA 08H1317M
MITSUBISHI ELECTRIC
1/9
23 Dec 2002

1 page




RA08H1317M-E01 pdf
ELECTROSTATIC SENSITIVE DEVICE
OBSERVE HANDLING PRECAUTIONS
OUTLINE DRAWING (mm)
(1.7)
(4.4)
30.0 ±0.2
26.6 ±0.2
21.2 ±0.2
5
1 2 34
2-R1.5 ±0.1
6.1 ±1
13.7 ±1
18.8 ±1
23.9 ±1
MITSUBISHI RF POWER MODULE
RA08H1317M
Ø0.45 ±0.15
1 RF Input (Pin)
2 Gate Voltage (VGG)
3 Drain Voltage (VDD)
4 RF Output (Pout)
5 RF Ground (Case)
RA 08H1317M
MITSUBISHI ELECTRIC
5/9
23 Dec 2002

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