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PDF R580 Data sheet ( Hoja de datos )
| Número de pieza | R580 | |
| Descripción | PHOTOMULTlPLlER TUBE | |
| Fabricantes | Hamamatsu Corporation | |
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PHOTOMULTlPLlER TUBE
R580
For Scintillation Counting and High Energy Physics
38mm(1-1/2 lnch) Diameter, 10–stage, Bialkali Photocathode, Head–On Type
GENERAL
Spectral Response
Parameter
Wavelength of Maximum Response
Photocathode
Window Material
MateriaI
Minimum Effective Area
Dynode
Direct Interelectrode
Capacitances
Base
SuitabIe Socket
Structure
Number of Stages
Anode to Last Dynode
Anode to All Other Electrodes
Description/Value
300 to 650
420
Bialkali
34
Borosilicate glass
Linear focused
10
3
7
JEDEC No.B12–43
E678–12A(supplied)
Unit
nm
nm
mm dia.
pF
pF
MAXIMUM RATINGS (Absolute Maximum Values)
Parameter
Supply Voltage
Between Anode and Cathode
Between Anode and Last Dynode
Avarage Anode Current
Ambient Temperature
Value
1750
350
0.1
-30 to +50
Unit
Vdc
Vdc
mA
CHARACTERISTlCS (at 25 )
Parameter
Min.
Typ.
Luminous (2856K)
70 90
Cathode Sensitivity
Radiant at 420nm
Blue (CS 5 58 filter)
88
9 11
Quantum Efficiency at 420nm
27
Anode Sensitivity
Luminous (2856K)
10 100
Gain
1. 1 1 0 6
Anode Dark Current (after 30min. storage in darkness)
3
Anode Pulse Rise Time
2.7
Time Response
Electron Transit Time
37
Transit Time Spread (FWHM)
4.5
Pulse Linearity ( 2% deviation)
150
NOTE: Anode characteristics are measured with the voItage distribution ratio shown below.
Max.
20
Unit
A/lm
mA/W
A/lm –b
%
A/lm
nA
ns
ns
ns
mA
VOLTAGE DlSTRlBUTlON RATlO AND SUPPLY VOLTAGE
Electrodes
Ratio
K Dy1 Dy2 Dy3 Dy4 Dy5 Dy6 Dy7 Dy8 Dy9 Dy10
211 1 1 1 1 1 1 1 1
SuppIy Voltage : 1250Vdc, K : Cathode, Dy : Dynode, P : Anode
P
SPECIAL VOLTAGE DlSTRlBUTlON RATlO FOR PULSE LINEARITY MEASUREMENT
Electrodes K Dy1 Dy2 Dy3 Dy4 Dy5 Dy6 Dy7 Dy8 Dy9 Dy10 P
Ratio
211
11
1 1.2 1.5 2.2 3.6 3
Parallel Capacitors in F
0.01 0.02 0.04 0.06
SuppIy Voltage :1500Vdc
Subject to local technical requirements and regulations, availability of products included in this promotional material may vary. Please consult with our sales office.
Information furnished by HAMAMATS U is believed to be reliable. However, no responsibility is assumed for possible inaccuracies or omissions. Specifications are
subject to change without notice. No patent rights are granted to any of the circuits described herein. © 1999 Hamamatsu Photonics K.K.
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