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Número de pieza R3612
Descripción PROGRAMMABLE OVERVOLTAGE PROTECTOR FOR ERICSSON COMPONENTS 3357/3 DCLIC
Fabricantes Power Innovations Limited 
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Copyright © 1997, Power Innovations Limited, UK
R3612
PROGRAMMABLE OVERVOLTAGE PROTECTOR
FOR ERICSSON COMPONENTS 3357/3 DCLIC
DECEMBER 1995 - REVISED SEPTEMBER 1997
OVERVOLTAGE PROTECTION FOR ERICSSON COMPONENTS LINE INTERFACE CIRCUITS
q PBA 3357/3 DCLIC Overvoltage Protector
q Dual Voltage-Programmable Protector
- Wide 0 to -70 V Programming Range
- Low Voltage Overshoot Crowbar and Diode
- Low 5 mA max. Triggering Current
- Does not Charge Gate Supply
- Specified for 0°C to 70°C Operation
- Plastic Dual-in-line Package
q Rated for International Surge Wave Shapes
WAVE SHAPE
STANDARD
2/10 µs
0.5/700 µs
10/700 µs
10/1000 µs
TR-NWT-001089
RLM88
K17, K20, K21
TR-NWT-001089
ITSP
A
80
38
38
30
P PACKAGE
(TOP VIEW)
(Tip) K1
(Gate) G
1
2
8 K1 (Tip)
7 A (Ground)
NC 3
6 A (Ground)
(Ring) K2 4
5 K2 (Ring)
MD6XAV
NC - No internal connection
Terminal typical application names shown in
parenthesis
device symbol
K1 G K2
description
The R3612 is a dual forward-conducting buffered
p-gate over voltage protector in a plastic DIP
package. It is designed to protect the Ericsson
Components PBA 3357/3 DCLIC (Dual Channel
Complete Line Interface Circuit) against over
voltages on the telephone line caused by
lightning, a.c. power contact and induction. The
R3612 limits voltages that exceed the DCLIC
supply rail voltage.
The DCLIC line driver section is powered from
0 V (ground) and a negative voltage in the region
of -44 V to -56 V. The protector gate is connected
to this negative supply. This references the
protection (clipping) voltage to the negative
supply voltage. As the protection voltage will
track the negative supply voltage the over
voltage stress on the DCLIC is minimised.
Positive over voltages are clipped to ground by a
low voltage overshoot diode. Negative over
voltages are initially clipped close to the DCLIC
negative supply rail value. If sufficient current is
available from the over voltage, then the
protector will crowbar into a low voltage on-state
condition. As the over voltage subsides the high
holding current of the crowbar prevents d.c.
latchup.
The buffered gate design reduces the loading on
the DCLIC supply during over voltages caused
A SD6XAE
Terminals K1, K2 and A correspond to the alternative
line designators of T, R and G or A, B and C. The
negative protection voltage is controlled by the voltage,
VGG, applied to the G terminal.
by power cross and induction. The gate
characteristic is designed to produce a net
current drain on the interface circuit voltage
supply during low level power cross or induction.
This removes the need for a separate clamping
diode across the voltage supply.
These monolithic protection devices are
fabricated in ion-implanted planar vertical power
structures for high reliability and in normal
system operation they are virtually transparent.
Characteristic values for the R3612 are
measured either at the extremes of the DCLIC
recommended operating voltage range (-44 V to
-56 V) or at the DCLIC maximum rated supply
voltage (-70 V).
PRODUCT INFORMATION
Information is current as of publication date. Products conform to specifications in accordance
with the terms of Power Innovations standard warranty. Production processing does not
necessarily include testing of all parameters.
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R3612 pdf
R3612
PROGRAMMABLE OVERVOLTAGE PROTECTOR
FOR ERICSSON COMPONENTS 3357/3 DCLIC
DECEMBER 1995 - REVISED SEPTEMBER 1997
general
DEVICE PARAMETERS
Thyristor based over voltage protectors, for telecommunications equipment, became popular in the late
1970s. These were fixed voltage breakover triggered devices, likened to solid state gas discharge tubes. As
these were new forms of thyristor, the existing thyristor terminology did not cover their special characteristics.
This resulted in the invention of new terms based on the application usage and device characteristic. Initially,
there was a wide diversity of terms to describe the same thing, but today the number of terms have reduced
and stabilised. Information on fixed voltage over voltage protector terms, symbols and their definitions is given
in the publication SLPDE05, “Over-voltage Protection For Telecommunication Systems - Data Manual and
Application Information”, pp 1-4 to 1-6, Texas Instruments Limited, Bedford, 1994.
Programmable, (gated), over voltage protectors are relatively new and require additional parameters to
specify their operation. Similarly to the fixed voltage protectors, the introduction of these devices has resulted
in a wide diversity of terms to describe the same thing. This section has a list of alternative terms and the
parameter definitions used for this data sheet. In general, the Texas Instruments approach is to use terms
related to the device internal structure, rather than its application usage as a single device may have many
applications each using a different terminology for circuit connection.
terms, definitions and symbols
Thyristor over voltage protectors have substantially different characteristics and usage to the type of thyristor
covered by IEC 747-6. These differences necessitate the modification of some characteristic descriptions and
the introduction of new terms. Where possible terms are used from the following standards.
IEC 747-1:1983, Semiconductor devices - Discrete devices and integrated circuits - Part 1: General
IEC 747-2:1983, Semiconductor devices - Discrete devices and integrated circuits - Part 2: Rectifier Diodes
IEC 747-6:1983, Semiconductor devices - Discrete devices and integrated circuits - Part 6: Thyristors
main terminal ratings
Repetitive Peak Off-State Voltage, VDRM
Rated maximum (peak) instantaneous voltage that may be applied in the off-state conditions including all d.c.
and repetitive voltage components.
Repetitive Peak On-State Current, ITRM
Rated maximum (peak) value of a.c. power frequency on-state current of specified waveshape and frequency
which may be applied continuously.
Non-Repetitive Peak On-State Current, ITSM
Rated maximum (peak) value of a.c. power frequency on-state surge current of specified waveshape and
frequency which may be applied for a specified time or number of a.c. cycles.
Non-Repetitive Peak Pulse Current, ITSP
Rated maximum value of peak impulse pulse current of specified amplitude and waveshape that may be
applied.
Non-Repetitive Peak Forward Current, IFSM
Rated maximum (peak) value of a.c. power frequency forward surge current of specified waveshape and
frequency which may be applied for a specified time or number of a.c. cycles.
PRODUCT INFORMATION
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R3612 arduino
R3612
PROGRAMMABLE OVERVOLTAGE PROTECTOR
FOR ERICSSON COMPONENTS 3357/3 DCLIC
DECEMBER 1995 - REVISED SEPTEMBER 1997
0
-20
-40
-60
-80
0
400
300
200
100
0
-100
-200
0
5 10 15
Time - ms
IK
IG
IK
5 10 15
Time - ms
20
100
75
50
25
0
-25
-50
20
Figure 6. PROTECTOR HIGH IMPEDANCE POWER CROSS CLAMPING WAVEFORMS
the cathode and anode current decrease, increasing the gate current which peaks for a second time at about
40 mA. The second gate current peak is lower due to the heating caused by the clipping action.
The gate current behaviour is unusual. In the normal common cathode mode operation, once the gate current
reaches its triggering value, IGT, the thyristor switches on. In this case the thyristor is being operated in
common gate mode which results in negative feedback. The negative feedback counteracts the thyristors
internal positive feedback (regeneration) preventing switching until the thyristor does not need a gate current
supplement from the gate supply voltage. In common gate mode, thyristor switches at zero gate current and
the gate current peaks earlier as the thyristor starts to become active.
In Figure 5, although the full cycle average gate current is only 6 mA, peaks of 70 mA and 40 mA occur
during the clamping period. This current is a charging current which tries to make the SLIC supply rail even
more negative. If the current drawn by the SLIC is less than the gate current, the SLIC supply rail may
increase to a point where the SLIC suffers an over voltage on its supply rail. In such cases the shunt
avalanche diode, D6, provides the necessary protection by limiting the maximum supply voltage.
IC protectors
In 1986 an IC version was proposed (A 90 V Switching Regulator and Lightning Protection Chip Set, Robert
K. Chen, Thomas H. Lerch, Johnathan S. Radovsky, D. Alan Spires, IEEE Solid-State Circuits Conference,
February 20, 1986, pp 178/9 and pp 340/1). Commercially, this resulted in the AT&T Microelectronics
LB1201AB device and the higher current Texas Instruments Inc. TCM1060 device, Figure 5.
PRODUCT INFORMATION
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