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Número de pieza RF2192
Descripción 3V 900MHZ LINEAR POWER AMPLIFIER
Fabricantes RF Micro Devices 
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RF2192
0 3V 900MHz LINEAR POWER AMPLIFIER
RoHS Compliant & Pb-Free Product
Typical Applications
• 3V CDMA/AMPS Cellular Handsets
• 3V TDMA/GAIT Cellular Handsets
• 3V JCDMA Cellular Handsets
• 3V CDMA2000 Cellular Handsets
• 3V CDMA 450MHz Band Handsets
• Portable Battery-Powered Equipment
Product Description
The RF2192 is a high-power, high-efficiency linear ampli-
fier IC targeting 3V handheld systems. The device is
manufactured on an advanced Gallium Arsenide Hetero-
junction Bipolar Transistor (HBT) process, and has been
designed for use as the final RF amplifier in dual-mode
3V CDMA/AMPS and CDMA2000 handheld digital cellu-
lar equipment, spread-spectrum systems, and other
applications in the 800MHz to 960MHz band. The
RF2192 has a low power mode to extend battery life
under low output power conditions. The device is pack-
aged in a 16-pin, 4mmx4mm QFN.
3.75
0.10 C A
2 PLCS
12°
MAX
3.75
0.10 C B
2 PLCS
-B-
0.80
TYP
1.50
SQ.
0.75
0.50
INDEX AREA
Dimensions in mm.
0.45
0.28
Shaded pin is lead 1.
4.00
0.10 C B
2 PLCS
2.00
A
2 1.60
2 PLCS
4.00
3.20
2 PLCS
2.00
0.10 C A
2 PLCS
0.10 M C A B
0.05
0.00
1.00
0.90
0.75
0.65
C
0.05
Optimum Technology Matching® Applied
Si BJT
9GaAs HBT
GaAs MESFET
Si Bi-CMOS
SiGe HBT
Si CMOS
InGaP/HBT
GaN HEMT
SiGe Bi-CMOS
1 16 15 14 13
GND 2
12 RF OUT
GND 3
11 RF OUT
RF IN 4
10 RF OUT
56 7 89
Functional Block Diagram
Rev A8 060918
Package Style: QFN, 16-Pin, 4x4
Features
• Single 3V Supply
• 29dBm Linear Output Power
• 37% Linear Efficiency
• Low Power Mode
• 45 mA idle current
• 47% Peak Efficiency 31dBm Output
Ordering Information
RF2192
3V 900MHz Linear Power Amplifier
RF2192PCBA-41X Fully Assembled Evaluation Board
RF Micro Devices, Inc.
7628 Thorndike Road
Greensboro, NC 27409, USA
Tel (336) 664 1233
Fax (336) 664 0454
http://www.rfmd.com
2-327

1 page




RF2192 pdf
RF2192
Pin Function Description
Interface Schematic
1
GND
Ground connection.
2
GND
Ground connection.
3
GND
Ground connection.
4
RF IN
RF input. An external 100pF series capacitor is required as a DC block.
In addition, shunt inductor and series capacitor are required to provide
VCC1
2:1 VSWR.
100 pF
RF IN
From
Bias GND1
Stages
5 VREG1 Power Down control for first stage. Regulated voltage supply for ampli-
fier bias. In Power Down mode, both VREG and VMODE need to be LOW
(< 0.5 V).
6 VMODE For nominal operation (High Power Mode), VMODE is set LOW. When
set HIGH, the driver and final stage are dynamically scaled to reduce
the device size and as a result to reduce the idle current.
7 VREG2 Power Down control for the second stage. Regulated voltage supply for
amplifier bias. In Power Down mode, both VREG and VMODE need to be
LOW (<0.5V).
8 BIAS GND Bias circuitry ground. See application schematic.
9
GND
Ground connection.
10 RF OUT RF output and power supply for final stage. This is the unmatched col-
lector output of the second stage. A DC block is required following the
matching components. The biasing may be provided via a parallel L-C
set for resonance at the operating frequency of 824MHz to 849MHz. It
is important to select an inductor with very low DC resistance with a 1A
current rating. Alternatively, shunt microstrip techniques are also appli-
cable and provide very low DC resistance. Low frequency bypassing is
required for stability.
RF OUT
From Bias
Stages
11 RF OUT Same as pin 10.
See pin 10.
12 RF OUT Same as pin 10.
13
2FO
Harmonic trap. This pin connects to the RF output but is used for pro-
viding a low impedance to the second harmonic of the operating fre-
quency. An inductor or transmission line resonating with an on chip
capacitor at 2fo is required at this pin.
14 VCC BIAS Power supply for bias circuitry. A 100pF high frequency bypass capaci-
tor is recommended.
15
VCC1
Power supply for first stage.
16
VCC1
Same as Pin 15.
Pkg
Base
GND
Ground connection. The backside of the package should be soldered to
a top side ground pad which is connected to the ground plane with mul-
tiple vias. The pad should have a short thermal path to the ground
plane.
Note: This schematic is a preliminary schematic. This 450MHz band CDMA tune is done by modifying the existing
800MHz band CDMA evaluation board.
Rev A8 060918
2-331

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