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PDF RF1S60P03SM Data sheet ( Hoja de datos )

Número de pieza RF1S60P03SM
Descripción 60A/ 30V/ Avalanche Rated/ P-Channel Enhancement-Mode Power MOSFETs
Fabricantes Fairchild Semiconductor 
Logotipo Fairchild Semiconductor Logotipo



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No Preview Available ! RF1S60P03SM Hoja de datos, Descripción, Manual

SEMICONDUCTOR
RFG60P03, RFP60P03,
RF1S60P03, RF1S60P03SM
December 1995
60A, 30V, Avalanche Rated, P-Channel
Enhancement-Mode Power MOSFETs
Features
• 60A, 30V
• rDS(ON) = 0.027
Temperature Compensating PSPICE Model
• Peak Current vs Pulse Width Curve
• UIS Rating Curve
• +175oC Operating Temperature
Packages
DRAIN
(BOTTOM
SIDE METAL)
JEDEC STYLE TO-247
SOURCE
DRAIN
GATE
Description
The RFG60P03, RFP60P03, RF1S60P03 and
RF1S60P03SM P-Channel power MOSFETs are manufac-
tured using the MegaFET process. This process, which uses
feature sizes approaching those of LSI integrated circuits
gives optimum utilization of silicon, resulting in outstanding
performance. They were designed for use in applications
such as switching regulators, switching converters, motor
drivers and relay drivers. These transistors can be operated
directly from integrated circuits.
PACKAGE AVAILABILITY
PART NUMBER
PACKAGE
BRAND
RFG60P03
TO-247
RFG60P03
RFP60P03
TO-220AB
RFP60P03
RF1S60P03
TO-262AA
F1S60P03
RF1S60P03SM
TO-263AB
F1S60P03
NOTE: When ordering use the entire part number.
DRAIN
(FLANGE)
JEDEC TO-220AB
SOURCE
DRAIN
GATE
DRAIN
(FLANGE)
JEDEC TO-262AA
SOURCE
DRAIN
GATE
Formerly developmental type TA49045.
Symbol
G
D
S
JEDEC TO-263AB
GATE
SOURCE
MA
DRAIN
(FLANGE)
Absolute Maximum Ratings TC = +25oC
Drain Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VDSS
Drain Gate Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VDGR
Gate Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VGS
Drain Current
RMS Continuous. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ID
Pulsed Drain Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . IDM
Single Pulse Avalanche Rating . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .EAS
Power Dissipation
TC = +25oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . PD
Derate above +25oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .PT
Operating and Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .TJ, TSTG
RFG60P03, RFP60P03,
RF1S60P03, RFS60P03SM
-30
-30
±20
60
Refer to Peak Current Curve
Refer to UIS Curve
176
1.17
-55 to +175
UNITS
V
V
V
A
W
W/oC
oC
CAUTION: These devices are sensitive to electrostatic discharge. Users should follow proper ESD handling procedures.
Copyright © Harris Corporation 1995
4-51
File Number 3951.1

1 page




RF1S60P03SM pdf
RFG60P03, RFP60P03, RF1S60P03, RF1S60P03SM
Typical Performance Curves (Continued)
-200
-100
STARTING TJ = +25oC
STARTING TJ = +150oC
If R = 0
tAV = (L) (IAS) / (1.3RATED BVDSS - VDD)
If R 0
tAV = (L/R) ln [(IAS*R) / (1.3 RATED BVDSS - VDD) + 1]
-10
0.01
0.1
1
tAV, TIME IN AVALANCHE (ms)
10
FIGURE 13. UNCLAMPED INDUCTIVE SWITCHING
Test Circuits and Waveforms
VARY tP TO OBTAIN
REQUIRED PEAK IAS
0V
tP
VGS
RG
VDS
L
DUT
-
VDD
+
IL
0.01
FIGURE 14. UNCLAMPED ENERGY TEST CIRCUIT
tP
IAS
BVDSS
VDS
VDD
tAV
FIGURE 15. UNCLAMPED ENERGY WAVEFORMS
0V
VGS
RGS
VDD
RL
VDS
DUT
FIGURE 16. RESISTIVE SWITCHING TEST CIRCUIT
VDS
tON
tD(ON)
tR
10%
tOFF
tD(OFF)
tF
10%
90%
VGS
10%
50%
PULSE WIDTH
90%
50%
90%
FIGURE 17. RESISTIVE SWITCHING WAVEFORMS
4-55

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