DataSheet.es    


PDF RF1S45N06SM Data sheet ( Hoja de datos )

Número de pieza RF1S45N06SM
Descripción 45A/ 60V/ Avalanche Rated N-Channel Enhancement-Mode Power MOSFETs
Fabricantes Fairchild Semiconductor 
Logotipo Fairchild Semiconductor Logotipo



Hay una vista previa y un enlace de descarga de RF1S45N06SM (archivo pdf) en la parte inferior de esta página.


Total 6 Páginas

No Preview Available ! RF1S45N06SM Hoja de datos, Descripción, Manual

SEMICONDUCTOR
RFG45N06, RFP45N06,
RF1S45N06, RF1S45N06SM
December 1995
45A, 60V, Avalanche Rated N-Channel
Enhancement-Mode Power MOSFETs
Features
• 45A, 60V
• rDS(ON) = 0.028
Temperature Compensating PSPICE Model
• Peak Current vs Pulse Width Curve
• UIS Rating Curve
• +175oC Operating Temperature
Description
The RFG45N06, RFP45N06, RF1S45N06, RF1S45N06SM
N-Channel power MOSFETs are manufactured using the
MegaFET process. This process, which uses feature sizes
approaching those of LSI integrated circuits gives optimum
utilization of silicon, resulting in outstanding performance.
They were designed for use in applications such as switch-
ing regulators, switching converters, motor drivers, relay
drivers and emitter switches for bipolar transistors. These
transistors can be operated directly from integrated circuits.
PACKAGE AVAILABILITY
PART NUMBER
PACKAGE
BRAND
RFG45N06
TO-247
RFG45N06
RFP45N06
TO-220AB
RFP45N06
RF1S45N06
TO-262AA
F1S45N06
RF1S45N06SM
TO-263AB
F1S45N06
NOTE: When ordering, use the entire part number. Add the suffix, 9A,
to obtain the TO-263AB variant in tape and reel, i.e. RF1S45N06SM9A.
Formerly developmental type TA49028.
Packages
DRAIN
(BOTTOM
SIDE METAL)
JEDEC STYLE TO-247
SOURCE
DRAIN
GATE
DRAIN
(FLANGE)
JEDEC TO-220AB
SOURCE
DRAIN
GATE
JEDEC TO-262AA
DRAIN
(FLANGE)
SOURCE
DRAIN
GATE
JEDEC TO-263AB
Symbol
D
G
GATE
SOURCE
MA
DRAIN
(FLANGE)
S
Absolute Maximum Ratings TC = +25oC
Drain Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VDSS
Drain Gate Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VDGR
Gate Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VGS
Drain Current
RMS Continuous. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ID
Pulsed Drain Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .IDM
Pulsed Avalanche Rating . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . EAS
Maximum Avalanche Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .IAM
Power Dissipation
TC = +25oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . PD
Derate above +25oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . PT
Operating and Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TSTG, TJ
RFG45N06, RFP45N06
RF1S45N06, RF1S45N06SM
60
60
±20
45
Refer to Peak Current Curve
Refer to UIS Curve
125
131
0.877
-55 to +175
UNITS
V
V
V
A
A
W
W/oC
oC
CAUTION: These devices are sensitive to electrostatic discharge. Users should follow proper ESD handling procedures.
Copyright © Harris Corporation 1995
3-33
File Number 3574.2

1 page




RF1S45N06SM pdf
RFG45N06, RFP45N06, RF1S45N06, RF1S45N06SM
Typical Performance Curves (Continued)
300
100
STARTING TJ = +25oC
10 STARTING TJ = +150oC
If R = 0
tAV = (L) (IAS) / (1.3 RATED BVDSS - VDD)
If R 0
1 tAV = (L/R) ln [(IAS*R) / (1.3 RATED BVDSS - VDD) + 1]
0.01
0.1
1
tAV, TIME IN AVALANCHE (ms)
10
FIGURE 13. UNCLAMPED INDUCTIVE SWITCHING
Test Circuits and Waveforms
tP
IAS
BVDSS
VDS
VDD
tAV
FIGURE 14. UNCLAMPED ENERGY WAVEFORMS
VARY tP TO OBTAIN
REQUIRED PEAK IAS
VGS
RG
VDS
L
DUT
+
VDD
-
0V tP
IL
0.01
FIGURE 15. UNCLAMPED ENERGY TEST CIRCUIT
VDS
tON
tD(ON)
tR
90%
10%
VGS
10%
50%
PULSE WIDTH
tOFF
tD(OFF)
tF
90%
10%
90%
50%
FIGURE 16. RESISTIVE SWITCHING WAVEFORMS
VGS
0V
RGS
VDD
RL
VDS
DUT
FIGURE 17. RESISTIVE SWITCHING TEST CIRCUIT
3-37

5 Page










PáginasTotal 6 Páginas
PDF Descargar[ Datasheet RF1S45N06SM.PDF ]




Hoja de datos destacado

Número de piezaDescripciónFabricantes
RF1S45N06SM45A/ 60V/ Avalanche Rated N-Channel Enhancement-Mode Power MOSFETsFairchild Semiconductor
Fairchild Semiconductor
RF1S45N06SM45A/ 60V/ 0.028 Ohm/ N-Channel Power MOSFETsIntersil Corporation
Intersil Corporation

Número de piezaDescripciónFabricantes
SLA6805M

High Voltage 3 phase Motor Driver IC.

Sanken
Sanken
SDC1742

12- and 14-Bit Hybrid Synchro / Resolver-to-Digital Converters.

Analog Devices
Analog Devices


DataSheet.es es una pagina web que funciona como un repositorio de manuales o hoja de datos de muchos de los productos más populares,
permitiéndote verlos en linea o descargarlos en PDF.


DataSheet.es    |   2020   |  Privacy Policy  |  Contacto  |  Buscar