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PDF RF1S45N03L Data sheet ( Hoja de datos )
| Número de pieza | RF1S45N03L | |
| Descripción | 45A/ 30V/ 0.022 Ohm/ Logic Level/ N-Channel Power MOSFETs | |
| Fabricantes | Intersil Corporation | |
| Logotipo |  |
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Semiconductor
September 1998
RFP45N03L,
RF1S45N03L, RF1S45N03LSM
45A, 30V, 0.022 Ohm,
Logic Level, N-Channel Power MOSFETs
[ /Title
(RFP45
N03L,
RF1S45
N03L,
RF1S45
N03LS
M)
/Subject
(45A,
30V,
0.022
Ohm,
Features
• 45A, 30V
• rDS(ON) = 0.022Ω
• Temperature Compensating PSPICE Model
• Can be Driven Directly from CMOS, NMOS, and TTL
Circuits
• Peak Current vs Pulse Width Curve
• UIS Rating Curve
• 175oC Operating Temperature
• Related Literature
- TB334 “Guidelines for Soldering Surface Mount
Components to PC Boards”
Description
These are N-Channel power MOSFETs manufactured using
the MegaFET process. This process, which uses feature
sizes approaching those of LSI circuits, gives optimum utili-
zation of silicon, resulting in outstanding performance. They
were designed for use in applications such as switching reg-
ulators, switching converters, motor drivers and relay drivers.
These transistors can be operated directly from integrated
circuits.
Formerly developmental type TA49030.
Symbol
D
Ordering Information
PART NUMBER
PACKAGE
BRAND
RFP45N03L
TO-220AB
FP45N03L
RF1S45N03L
TO-262AA
F45N03L
RF1S45N03LSM TO-263AB
F45N03L
NOTE: When ordering, use the entire part number. Add the suffix 9A, to
obtain the TO-263AB variant in tape and reel, e.g., RF1S45N03LSM9A.
G
S
Packaging
JEDEC TO-220AB
DRAIN (FLANGE)
SOURCE
DRAIN
GATE
JEDEC TO-262AA
DRAIN
(FLANGE)
SOURCE
DRAIN
GATE
JEDEC TO-263AB
GATE
SOURCE
DRAIN
(FLANGE)
CAUTION: These devices are sensitive to electrostatic discharge. Users should follow proper ESD Handling Procedures.
Copyright © Harris Corporation 1998
7-1
File Number 4005.2
1 page  
RFP45N03L, RF1S45N03L, RF1S45N03LSM
Typical Performance Curves Unless Otherwise Specified (Continued)
2.0 2.0
VGS = VDS, ID = 250µA
ID = 250µA
1.5 1.5
1.0 1.0
0.5 0.5
0
-80 -40 0 40 80 120 160 200
TJ, JUNCTION TEMPERATURE (oC)
FIGURE 12. NORMALIZED GATE THRESHOLD VOLTAGE vs
JUNCTION TEMPERATURE
0
-80 -40 0 40 80 120 160 200
TJ, JUNCTION TEMPERATURE (oC)
FIGURE 13. NORMALIZED DRAIN TO SOURCE BREAKDOWN
VOLTAGE vs JUNCTION TEMPERATURE
2500
2000
1500
CISS
VGS = 0V, f = 0.1MHz
CISS = CGS + CGD
CRSS = CGD
COSS ≈ CDS + CGD
1000
500
0
0
COSS
CRSS
5 10 15 20
VDS, DRAIN TO SOURCE VOLTAGE (V)
25
FIGURE 14. CAPACITANCE vs DRAIN TO SOURCE VOLTAGE
30
VDD = BVDSS
24
VDD = BVDSS
5
4
18
0.75 BVDSS
0.50 BVDSS
12 0.25 BVDSS
3
2
6
RL = 0.67Ω
IG(REF) = 0.6mA
1
VGS = 5V
00
20 I-I-GG-----((--AR----CE----FT----))
t, TIME (µs)
80 I-I-GG-----((--AR----CE----FT----))
NOTE: Refer to Harris Application Notes AN7254 and AN7260.
FIGURE 15. NORMALIZED SWITCHING WAVEFORMS FOR
CONSTANT GATE CURRENT
7-5
5 Page | ||
| Páginas | Total 7 Páginas | |
| PDF Descargar | [ Datasheet RF1S45N03L.PDF ] | |
Hoja de datos destacado
| Número de pieza | Descripción | Fabricantes |
| RF1S45N03L | 45A/ 30V/ 0.022 Ohm/ Logic Level/ N-Channel Power MOSFETs | Intersil Corporation |
| RF1S45N03LSM | 45A/ 30V/ 0.022 Ohm/ Logic Level/ N-Channel Power MOSFETs | Intersil Corporation |
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