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PDF RF1S30P06 Data sheet ( Hoja de datos )
| Número de pieza | RF1S30P06 | |
| Descripción | 30A/ 60V/ 0.065 Ohm/ P-Channel Power MOSFETs | |
| Fabricantes | Intersil Corporation | |
| Logotipo |  |
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RFG30P06, RFP30P06, RF1S30P06SM
Data Sheet
July 1999 File Number 2437.3
30A, 60V, 0.065 Ohm, P-Channel Power
MOSFETs
These are P-Channel power MOSFETs manufactured using
the MegaFET process. This process, which uses feature
sizes approaching those of LSI circuits, gives optimum
utilization of silicon, resulting in outstanding performance.
They are designed for use in applications such as switching
regulators, switching converters, motor drivers, and relay
drivers. These transistors can be operated directly from
integrated circuits.
Formerly developmental type TA09834.
Ordering Information
PART NUMBER
PACKAGE
BRAND
RFG30P06
TO-247
RFG30P06
RFP30P06
TO-220AB
RFP30P06
RF1S30P06SM
TO-263AB
F1S30P06
NOTE: When ordering, use the entire part number. Add the suffix 9A
to obtain the TO-263AB variant in tape and reel, i.e. RF1S30P06SM9A.
Packaging
DRAIN
(BOTTOM
SIDE METAL)
JEDEC STYLE TO-247
SOURCE
DRAIN
GATE
Features
• 30A, 60V
• rDS(ON) = 0.065Ω
• Temperature Compensating PSPICE® Model
• Peak Current vs Pulse Width Curve
• UIS Rating Curve
• 175oC Operating Temperature
• Related Literature
- TB334 “Guidelines for Soldering Surface Mount
Components to PC Boards”
Symbol
D
G
S
JEDEC TO-220AB
DRAIN
(FLANGE)
SOURCE
DRAIN
GATE
JEDEC TO-263AB
GATE
SOURCE
DRAIN
(FLANGE)
4-133
CAUTION: These devices are sensitive to electrostatic discharge; follow proper ESD Handling Procedures.
PSPICE® is a registered trademark of MicroSim Corporation.
http://www.intersil.com or 407-727-9207 | Copyright © Intersil Corporation 1999
1 page  
RFG30P06, RFP30P06, RF1S30P06SM
Typical Performance Curves Unless Otherwise Specified (Continued)
4000
3000
2000
1000
0
0
CISS
COSS
VGS = 0V, f = 1MHz
CISS = CGS + CGD
CRSS = CGD
COSS ≈ CDS + CGS
CRSS
-5 -10 -15 -20
VDS, DRAIN TO SOURCE VOLTAGE (V)
-25
FIGURE 12. CAPACITANCE vs DRAIN TO SOURCE VOLTAGE
-60 -10
GATE
VDD = BVDSS
SOURCE
VOLTAGE
VDD = BVDSS
-45 -7.5
RL = 2.0Ω
IG(REF) = -1.6mA
VGS = -10V
-30 -5
0.75 BVDSS
-15
0.50 BVDSS
0.25 BVDSS
-2.5
DRAIN SOURCE VOLTAGE
00
20 IG(REF)
IG(ACT)
t, TIME (µs)
80 IG(REF)
IG(ACT)
NOTE: Refer to Intersil Application Notes AN7254 and AN7260.
FIGURE 13. NORMALIZED SWITCHING WAVEFORMS FOR
CONSTANT GATE CURRENT
Test Circuits and Waveforms
VARY tP TO OBTAIN
REQUIRED PEAK IAS
0V
VGS
tP
RG
VDS
L
DUT
-
VDD
+
IAS
0.01Ω
FIGURE 14. UNCLAMPED ENERGY TEST CIRCUIT
VGS
VGS
RGS
VDS
RL
DUT
-
VDD
+
FIGURE 16. SWITCHING TIME TEST CIRCUIT
tAV
0
VDD
IAS
tP
BVDSS
VDS
FIGURE 15. UNCLAMPED ENERGY WAVEFORMS
tON
td(ON)
tr
0
10%
tOFF
td(OFF)
tf
10%
VDS
VGS
0
90%
10%
50%
PULSE WIDTH
90%
50%
90%
FIGURE 17. RESISTIVE SWITCHING WAVEFORMS
4-137
5 Page | ||
| Páginas | Total 8 Páginas | |
| PDF Descargar | [ Datasheet RF1S30P06.PDF ] | |
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