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PDF RF1S25N06SM Data sheet ( Hoja de datos )

Número de pieza RF1S25N06SM
Descripción 25A/ 60V/ 0.047 Ohm/ N-Channel Power MOSFETs
Fabricantes Fairchild Semiconductor 
Logotipo Fairchild Semiconductor Logotipo



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RFP25N06, RF1S25N06, RF1S25N06SM
Data Sheet
January 2002
25A, 60V, 0.047 Ohm, N-Channel Power
MOSFETs
These N-Channel power MOSFETs are manufactured using
the MegaFET process. This process, which uses feature
sizes approaching those of LSI integrated circuits gives
optimum utilization of silicon, resulting in outstanding
performance. They were designed for use in applications
such as switching regulators, switching converters, motor
drivers, and relay drivers. These transistors can be operated
directly from integrated circuits.
Formerly developmental type TA09771.
Ordering Information
PART NUMBER
PACKAGE
BRAND
RFP25N06
TO-220AB
RFP25N06
RF1S25N06
TO-262AA
F1S25N06
RF1S25N06SM
TO-263AB
F1S25N06
NOTE: When ordering use the entire part number. Add the suffix, 9A,
to obtain the TO-263AB variant in tape and reel, e.g. RF1S25N06SM9A.
Packaging
JEDEC TO- 220AB
DRAIN
(FLANGE)
SOURCE
DRAIN
GATE
Features
• 25A, 60V
• rDS(ON) = 0.047
• Temperature Compensating PSPICE® Model
• Peak Current vs Pulse Width Curve
• UIS Rating Curve
• 175oC Operating Temperature
• Related Literature
- TB334, “Guidelines for Soldering Surface Mount
Components to PC Boards”
Symbol
D
G
S
JEDEC TO-263AB
GATE
SOURCE
DRAIN
(FLANGE)
JEDEC TO-262AA
DRAIN
(FLANGE)
SOURCE
DRAIN
GATE
©2002 Fairchild Semiconductor Corporation
RFP25N06, RF1S25N06, RF1S25N06SM Rev. C

1 page




RF1S25N06SM pdf
RFP25N06, RF1S25N06, RF1S25N06SM
Typical Performance Curves Unless Otherwise Specified (Continued)
1600
1200
CISS
VGS = 0V, f = 1MHz
CISS = CGS + CGD
CRSS = CGD
COSS = CDS + CGD
60
VDD = BVDSS
45
VDD = BVDSS
10
7.5
800
COSS
400
0
0
CRSS
5 10 15 20
VDS, DRAIN TO SOURCE VOLTAGE (V)
25
FIGURE 12. CAPACITANCE vs DRAIN TO SOURCE VOLTAGE
30 5.0
0.75 BVDSS
0.50 BVDSS
15 0.25 BVDSS
2.5
RL = 2.4
Ig(REF) = 0.75mA
VGS = 10V
00
20 -II-gg----((--AR----CE----FT----))
t, TIME (µs)
80 I-I-gg----((--AR----CE----FT----))
NOTE: Refer to Fairchild Application Notes AN7254 and AN7260.
FIGURE 13. NORMALIZED SWITCHING WAVEFORMS FOR
CONSTANT GATE CURRENT
Test Circuits and Waveforms
VARY tP TO OBTAIN
REQUIRED PEAK IAS
VGS
tP
0V
RG
VDS
L
DUT
+
VDD
-
IAS
0.01
0
tP
IAS
BVDSS
VDS
VDD
tAV
FIGURE 14. UNCLAMPED ENERGY TEST CIRCUIT
FIGURE 15. UNCLAMPED ENERGY WAVEFORMS
VDS
VGS
RGS
RL
DUT
+
VDD
-
VGS
FIGURE 16. SWITCHING TIME TEST CIRCUIT
©2002 Fairchild Semiconductor Corporation
VDS
tON
td(ON)
tr
90%
tOFF
td(OFF)
tf
90%
10%
0
VGS
10%
0
50%
PULSE WIDTH
10%
90%
50%
FIGURE 17. RESISTIVE SWITCHING WAVEFORMS
RFP25N06, RF1S25N06, RF1S25N06SM Rev. C

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