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PDF RF1K49088 Data sheet ( Hoja de datos )
| Número de pieza | RF1K49088 | |
| Descripción | 3.5A/ 30V/ Avalanche Rated/ Logic Level/ Dual N-Channel LittleFET Enhancement Mode Power MOSFET | |
| Fabricantes | Fairchild Semiconductor | |
| Logotipo |  |
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SEMICONDUCTOR
RF1K49088
January 1997
3.5A, 30V, Avalanche Rated, Logic Level, Dual N-Channel
LittleFET™ Enhancement Mode Power MOSFET
Features
Description
• 3.5A, 30V
• rDS(ON) = 0.060Ω
• Temperature Compensating PSPICE Model
• On-Resistance vs Gate Drive Voltage Curves
• Peak Current vs Pulse Width Curve
• UIS Rating Curve
Ordering Information
PART NUMBER
PACKAGE
BRAND
The RF1K49088 Dual N-Channel power MOSFET is
manufactured using an advanced MegaFET process. This
process, which uses feature sizes approaching those of LSI
integrated circuits, gives optimum utilization of silicon,
resulting in outstanding performance. It is designed for use
in applications such as switching regulators, switching
converters, motor drivers, relay drivers, and low voltage bus
switches. This product achieves full rated conduction at a
gate bias in the 3V - 5V range, thereby facilitating true on-off
power control directly from logic level (5V) integrated circuits.
Formerly developmental type TA49088.
RF1K49088
MS-012AA
RF1K49088
NOTE: When ordering, use the entire part number. For ordering in
tape and reel, add the suffix 96 to the part number, i.e. RF1K4908896.
Symbol
D1(8)
D1(7)
S1(1)
G1(2)
D2(6)
D2(5)
S2(3)
G2(4)
Packaging
JEDEC MS-012AA
BRANDING DASH
1
2
3
4
5
LittleFET™ is a trademerk of Harris Corporation
CAUTION: These devices are sensitive to electrostatic discharge. Users should follow proper ESD Handling Procedures.
Copyright © Harris Corporation 1997
5-58
File Number 3952.4
1 page  
RF1K49088
Typical Performance Curves (Continued)
2.0
ID = 250µA
1.5
1000
750
1.0 500
CISS
VGS = 0V, FREQUENCY (f) = 1MHz
COSS
0.5
0.0
-80
-40 0 40 80 120
TJ, JUNCTION TEMPERATURE (oC)
160
FIGURE 13. NORMALIZED DRAIN TO SOURCE BREAKDOWN
VOLTAGE vs JUNCTION TEMPERATURE
250
CRSS
0
0 5 10 15 20
VDS, DRAIN TO SOURCE VOLTAGE (V)
FIGURE 14. CAPACITANCE vs VOLTAGE
25
30
22.5
VDD = BVDSS
VDD = BVDSS
5.00
3.75
15 2.50
0.75 BVDSS
0.50 BVDSS
7.5 0.25 BVDSS
1.25
RL = 8.57Ω
IG(REF) = 0.2mA
VGS = 5V
0
0.00
20 I-I-G-G----(-(--AR----C-E----FT----))-
t, TIME (µs)
80 I-I-G-G----(-(--AR----C-E----FT----))-
NOTE: Refer to Harris Application Notes AN7254 and AN7260.
FIGURE 15. NORMALIZED SWITCHING WAVEFORMS FOR CONSTANT GATE CURRENT
5-62
5 Page | ||
| Páginas | Total 7 Páginas | |
| PDF Descargar | [ Datasheet RF1K49088.PDF ] | |
Hoja de datos destacado
| Número de pieza | Descripción | Fabricantes |
| RF1K49086 | 3.5A/ 30V/ Avalanche Rated/ Dual N-Channel LittleFET Enhancement Mode Power MOSFET | Fairchild Semiconductor |
| RF1K49086 | 3.5A/ 30V/ 0.06 Ohm/ Dual N-Channel LittleFET Power MOSFET |  Intersil Corporation |
| RF1K49088 | 3.5A/ 30V/ Avalanche Rated/ Logic Level/ Dual N-Channel LittleFET Enhancement Mode Power MOSFET | Fairchild Semiconductor |
| RF1K49088 | 3.5A/ 30V/ 0.06 Ohm/ Logic Level/ Dual N-Channel LittleFET Power MOSFET | Intersil Corporation |
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