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PDF RHN7150 Data sheet ( Hoja de datos )

Número de pieza RHN7150
Descripción TRANSISTOR N-CHANNEL
Fabricantes International Rectifier 
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Provisional Data Sheet No. PD-9.720A
REPETITIVE AVALANCHE AND dv/dt RATED
HEXFET® TRANSISTOR
IRHN7150
IRHN8150
N-CHANNEL
MEGA RAD HARD
100 Volt, 0.055, MEGA RAD HARD HEXFET
International Rectifier’s MEGA RAD HARD technology
HEXFETs demonstrate excellent threshold voltage sta-
bility and breakdown voltage stability at total radiation
doses as high as 1 x 106 Rads (Si). Under identical pre-
and post-radiation test conditions, International Rectifier’s
RAD HARD HEXFETs retain identical electrical specifi-
cations up to 1 x 105 Rads (Si) total dose. At 1 x 106 Rads
(Si) total dose, under the same pre-dose conditions, only
minor shifts in the electrical specifications are observed
and are so specified in table 1. No compensation in gate
drive circuitry is required. In addition, these devices are
capable of surviving transient ionization pulses as high
as 1 x 1012 Rads (Si)/Sec, and return to normal operation
within a few microseconds. Single Event Effect (SEE)
testing of International Rectifier RAD HARD HEXFETs
has demonstrated virtual immunity to SEE failure. Since
the MEGA RAD HARD process utilizes International
Rectifier’s patented HEXFET technology, the user can
expect the highest quality and reliability in the industry.
RAD HARD HEXFET transistors also feature all of the
well-established advantages of MOSFETs, such as volt-
age control, very fast switching, ease of paralleling and
temperature stability of the electrical parameters.
Product Summary
Part Number
BV DSS
IRHN7150
100V
IRHN8150
100V
RDS(on)
0.055
0.055
ID
34A
34A
Features:
s Radiation Hardened up to 1 x 106 Rads (Si)
s Single Event Burnout (SEB) Hardened
s Single Event Gate Rupture (SEGR) Hardened
s Gamma Dot (Flash X-Ray) Hardened
s Neutron Tolerant
s Identical Pre- and Post-Electrical Test Conditions
s Repetitive Avalanche Rating
s Dynamic dv/dt Rating
s Simple Drive Requirements
s Ease of Paralleling
s Hermetically Sealed
s Surface Mount
s Light-weight
They are well-suited for applications such as switching
power supplies, motor controls, inverters, choppers, au-
dio amplifiers and high-energy pulse circuits in space and
weapons environments.
Absolute Maximum Ratings
Pre-Radiation
Parameter
ID @ VGS = 12V, TC = 25°C Continuous Drain Current
ID @ VGS = 12V, TC = 100°C Continuous Drain Current
IDM
PD @ TC = 25°C
Pulsed Drain Current Œ
Max. Power Dissipation
Linear Derating Factor
VGS
EAS
IAR
EAR
Gate-to-Source Voltage
Single Pulse Avalanche Energy 
Avalanche Current Œ
Repetitive Avalanche Energy Œ
dv/dt
Peak Diode Recovery dv/dt Ž
TJ
TSTG
Operating Junction
Storage Temperature Range
Package Mounting Surface Temperature
Weight
To Order
IRHN7150, IRHN8150
34
21
136
150
1.2
±20
500
34
15
5.5
-55 to 150
300 (for 5 sec.)
2.6 (typical)
Units
A
W
W/K 
V
mJ
A
mJ
V/ns
oC
g

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Post-Radiation
Figure 5. – Typical Zero Gate Voltage Drain Current
Vs. Total Dose Exposure.
Figure 6. – Typical On-State Resistance Vs.
Neutron Fluence Level
Figure 8a – Gate Stress
of VGSS Equals 12
Volts During Radiation.
Figure 7. – Typical Transient Response of
Rad Hard HEXFET During 1 x 1012
Rad (Si)/Sec Exposure.
Figure 8b – VDSS Stress
Equals 80% of BVDSS
During Radiation.
To Order
Figure 9. – High Dose Rate (Gamma Dot)
Test Circuit

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IRHN7150, IRHN8150 Devices
Index
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Pre-Radiation
Figure 28a – Switching Time Test Circuit
Figure 28b – Switching Time Waveforms
Figure 29a – Unclamped Inductive Test Circuit
Figure 29b – Unclamped Inductive Waveforms
To Order

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