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PDF RGF1D Data sheet ( Hoja de datos )

Número de pieza RGF1D
Descripción Surface Mount Glass Passivated Junction Fast Switching Rectifier
Fabricantes Vishay Siliconix 
Logotipo Vishay Siliconix Logotipo



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No Preview Available ! RGF1D Hoja de datos, Descripción, Manual

0.066 (1.68)
0.040 (1.02)
0.118 (3.00)
0.100 (2.54)
RGF1A thru RGF1M
Vishay Semiconductors
formerly General Semiconductor
Surface Mount Glass Passivated Junction
DO-214BA (GF1)
0.187 (4.75)
0.167 (4.24)
0.015 (0.38)
0.0065 (0.17)
Patented*Fast Switching Rectifier
®
Reverse Voltage 50 to 1000V
Forward Current 1.0A
Mounting Pad Layout
0.066 MIN.
(1.68 MIN.)
0.094 MAX.
(2.38 MAX.)
Dimensions in inches and (millimeters)
Glass-plastic encapsulation technique is covered by Patent
No. 3,996,602, brazed-lead assembly by Patent No.
3,930,306 and lead forming by Patent No. 5,151,846
0.108 (2.74)
0.098 (2.49) Features
0.052 MIN.
(1.32 MIN.)
0.220
(5.58) REF
0.060 (1.52)
0.030 (0.76)
0.006 (0.152) TYP.
0.226 (5.74)
0.196 (4.98)
Mechanical Data
0.114 (2.90)
0.094 (2.39)
• Plastic package has Underwriters Laboratories
Flammability Classification 94V-0
• Ideal for surface mount automotive applications
• High temperature metallurgically bonded construction
• Cavity-free glass passivated junction
Case: JEDEC DO-214BA, molded plastic over glass body
Terminals: Solder plated, solderable per MIL-STD-750,
Method 2026
• Capable of meeting environmental standards of MIL-S-19500
• Built-in strain relief • Easy pick and place
• Fast switching for high efficiency
Polarity: Color band denotes cathode end
Mounting Position: Any Weight: 0.0048 oz, 0.12 g
Packaging codes/options:
19/6.5K per 13” Reel (12mm Tape)
17/1.5K per 7” Reel (12mm Tape)
• High temperature soldering guaranteed:
450°C/5 seconds at terminals.
• Complete device submersible temperature of 265°C for
10 seconds in solder bath
Maximum Ratings & Thermal Characteristics Ratings at 25°C ambient temperature unless otherwise specified.
Parameter
Symbol RGF1A RGF1B RGF1D RGF1G RGF1J RGF1K RGF1M Unit
Device marking code
RA RB RD RG RJ RK RM
Maximum repetitive peak reverse voltage
VRRM 50 100 200 400 600 800 1000 V
Maximum RMS voltage
VRMS 35 70 140 280 420 560 700 V
Maximum DC blocking voltage
VDC 50 100 200 400 600 800 1000 V
Maximum average forward rectified current at TL = 120°C IF(AV)
1.0
A
Peak forward surge current 8.3ms single half sine-wave
superimposed on rated load (JEDEC Method)
IFSM
30
A
Max. full load reverse current, full cycle average TA = 55°C IR(AV)
50
µA
Typical thermal resistance(1)
RΘJA
RΘJL
80
28
°C/W
Operating junction and storage temperature range
TJ,TSTG
65 to +175
°C
Electrical Characteristics (TJ = 25°C unless otherwise noted)
Parameter
Symbol RGF1A RGF1B RGF1D RGF1G RGF1J RGF1K RGF1M
Maximum instantaneous forward voltage at 1.0A
VF
1.30
Maximum DC reverse current
at rated DC blocking voltage
TA = 25°C
TA = 125°C
IR
5.0
100
Typical reverse recovery time at
IF = 0.5A, IR = 1.0A, Irr = 0.25 A
trr 150 250 500
Typical junction capacitance at 4.0V, 1MHz
CJ
8.5
Unit
V
µA
ns
pF
Note: (1) Thermal resistance from junction to ambient and from junction to lead, P.C.B. mounted on 0.2 x 0.2(5.0 x 5.0mm) copper pad areas
Document Number 88697
08-Feb-02
www.vishay.com
1

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