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PDF RFW2N06RLE Data sheet ( Hoja de datos )

Número de pieza RFW2N06RLE
Descripción 2A/ 60V/ 0.160 Ohm/ Logic Level/ N-Channel Power MOSFET
Fabricantes Intersil Corporation 
Logotipo Intersil Corporation Logotipo



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Data Sheet
RFW2N06RLE
July 1999 File Number 2838.3
2A, 60V, 0.160 Ohm, Logic Level,
N-Channel Power MOSFET
The RFW2N06RLE N-Channel, logic level, ESD protected,
power MOSFET is manufactured using the MegaFET
process. This process, which uses feature sizes
approaching those of LSI integrated circuits, gives optimum
utilization of silicon, resulting in outstanding performance.
The RFW2N06RLE was designed for use with logic level
(5V) driving sources in applications such as programmable
controllers, automotive switching, switching regulators,
switching converters, motor and relay drivers and emitter
switches for bipolar transistors. This performance is
accomplished through a special gate oxide design which
provides full rated conductance at gate biases in the 3V to
5V range, thereby facilitating true on-off power control
directly from logic circuit supply voltages.
Formerly developmental type TA9861.
Ordering Information
PART NUMBER
PACKAGE
BRAND
RFW2N06RLE
HEXDIP
RFW2N06RLE
NOTE: When ordering, use the entire part number.
Features
• 2A, 60V
• rDS(on) = 0.160
• UIS Rating Curve (Single Pulse)
• Design Optimized For 5 Volt Gate Drive
• Can be Driven Directly from CMOS, NMOS, TTL
Circuits
• Compatible with Automotive Drive Requirements
• SOA is Power Dissipation Limited
• Nanosecond Switching Speeds
• Linear Transfer Characteristics
• High Input Impedance
• Majority Carrier Device
• Electrostatic Discharge Protected
• Related Literature
- TB334 “Guidelines for Soldering Surface Mount
Components to PC Boards”
Symbol
D
Packaging
G
S
4 PIN HEXDIP
GATE
DRAIN
SOURCE
6-283
CAUTION: These devices are sensitive to electrostatic discharge; follow proper ESD Handling Procedures.
http://www.intersil.com or 407-727-9207 | Copyright © Intersil Corporation 1999

1 page




RFW2N06RLE pdf
Test Circuits and Waveforms
RFW2N06RLE
VGS
0V
VGS
RGS
RL
VDS
+
-
DUT
FIGURE 13. SWITCHING TIME TEST CIRCUIT
VGS
IG(REF)
VDS
RL
DUT
+
VDD
-
FIGURE 15. GATE CHARGE TEST CIRCUIT
VDS
tON
td(ON)
tr
90%
tOFF
td(OFF)
tf
90%
10%
0
VGS
10%
0
50%
PULSE WIDTH
10%
90%
50%
FIGURE 14. RESISTIVE SWITCHING WAVEFORMS
VDD
VDS
Qg(TOT)
VGS
VGS = 1V
0
IG(REF)
0
Qg(5)
Qg(TH)
VGS = 5V
VGS = 10V
FIGURE 16. GATE CHARGE WAVEFORMS
All Intersil semiconductor products are manufactured, assembled and tested under ISO9000 quality systems certification.
Intersil semiconductor products are sold by description only. Intersil Corporation reserves the right to make changes in circuit design and/or specifications at any time with-
out notice. Accordingly, the reader is cautioned to verify that data sheets are current before placing orders. Information furnished by Intersil is believed to be accurate and
reliable. However, no responsibility is assumed by Intersil or its subsidiaries for its use; nor for any infringements of patents or other rights of third parties which may result
from its use. No license is granted by implication or otherwise under any patent or patent rights of Intersil or its subsidiaries.
For information regarding Intersil Corporation and its products, see web site http://www.intersil.com
Sales Office Headquarters
NORTH AMERICA
Intersil Corporation
P. O. Box 883, Mail Stop 53-204
Melbourne, FL 32902
TEL: (407) 724-7000
FAX: (407) 724-7240
EUROPE
Intersil SA
Mercure Center
100, Rue de la Fusee
1130 Brussels, Belgium
TEL: (32) 2.724.2111
FAX: (32) 2.724.22.05
ASIA
Intersil (Taiwan) Ltd.
7F-6, No. 101 Fu Hsing North Road
Taipei, Taiwan
Republic of China
TEL: (886) 2 2716 9310
FAX: (886) 2 2715 3029
6-287

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