|
|
Número de pieza | RFP8P05 | |
Descripción | 8A/ 50V/ 0.300 Ohm/ P-Channel Power MOSFETs | |
Fabricantes | Intersil Corporation | |
Logotipo | ||
Hay una vista previa y un enlace de descarga de RFP8P05 (archivo pdf) en la parte inferior de esta página. Total 6 Páginas | ||
No Preview Available ! Data Sheet
RFD8P05, RFD8P05SM, RFP8P05
July 1999 File Number 2384.2
8A, 50V, 0.300 Ohm, P-Channel Power
MOSFETs
These products are P-Channel power MOSFETs
manufactured using the MegaFET process. This process,
which uses feature sizes approaching those of LSI circuits,
gives optimum utilization of silicon, resulting in outstanding
performance. They were designed for use in applications
such as switching regulators, switching converters, motor
drivers, and relay drivers. These transistors can be operated
directly from integrated circuits.
Formerly developmental type TA09832.
Ordering Information
PART NUMBER
PACKAGE
BRAND
RFD8P05
TO-251AA
D8P05
RFD8P05SM
TO-252AA
D8P05
RFP8P05
TO-220AB
RFP8P05
NOTE: When ordering, use the entire part number. Add the suffix 9A
to obtain the TO-252AA variant in tape and reel, i.e.,
RFD8P05SM9A.
Packaging
JEDEC TO-220AB
DRAIN (FLANGE)
SOURCE
DRAIN
GATE
Features
• 8A, 50V
• rDS(ON) = 0.300Ω
• UIS SOA Rating Curve
• SOA is Power Dissipation Limited
• Nanosecond Switching Speeds
• Linear Transfer Characteristics
• High Input Impedance
• Related Literature
- TB334 “Guidelines for Soldering Surface Mount
Components to PC Boards”
Symbol
D
G
S
JEDEC TO-251AA
DRAIN (FLANGE)
SOURCE
DRAIN
GATE
JEDEC TO-252AA
DRAIN (FLANGE)
GATE
SOURCE
4-112
CAUTION: These devices are sensitive to electrostatic discharge; follow proper ESD Handling Procedures.
http://www.intersil.com or 407-727-9207 | Copyright © Intersil Corporation 1999.
1 page RFD8P05, RFD8P05SM, RFP8P05
Test Circuits and Waveforms
VARY tP TO OBTAIN
REQUIRED PEAK IAS
0V
VGS
tP
RG
VDS
L
DUT
-
VDD
+
IAS
0.01Ω
FIGURE 12. UNCLAMPED ENERGY TEST CIRCUIT
RL
VGS
DUT
RG
-
VDD
+
FIGURE 14. SWITCHING TIME TEST CIRCUIT
VGS
Ig(REF)
VDS
RL
DUT
-
VDD
+
FIGURE 16. GATE CHARGE TEST CIRCUIT
4-116
tAV
0
VDD
IAS
tP
BVDSS
VDS
FIGURE 13. UNCLAMPED ENERGY WAVEFORMS
tON
td(ON)
tr
0
10%
VDS
VGS
0
90%
10%
50%
PULSE WIDTH
tOFF
td(OFF)
tf
10%
90%
50%
90%
FIGURE 15. RESISTIVE SWITCHING WAVEFORMS
0
VGS= -1V
-VGS
VDD
0
Ig(REF)
Qg(TH)
VDS
Qg(-5)
VGS= -5V
Qg(TOT)
VGS= -10V
FIGURE 17. GATE CHARGE WAVEFORMS
5 Page |
Páginas | Total 6 Páginas | |
PDF Descargar | [ Datasheet RFP8P05.PDF ] |
Número de pieza | Descripción | Fabricantes |
RFP8P05 | 8A/ 50V/ 0.300 Ohm/ P-Channel Power MOSFETs | Intersil Corporation |
RFP8P06E | 8A/ 60V/ 0.300 Ohm/ P-Channel Power MOSFETs | Intersil Corporation |
RFP8P06LE | 8A/ 60V/ 0.300 Ohm/ ESD Rated/ Logic Level/ P-Channel Power MOSFET | Intersil Corporation |
RFP8P08 | P-Channel Power MOSFETs | Harris Semiconductor |
Número de pieza | Descripción | Fabricantes |
SLA6805M | High Voltage 3 phase Motor Driver IC. |
Sanken |
SDC1742 | 12- and 14-Bit Hybrid Synchro / Resolver-to-Digital Converters. |
Analog Devices |
DataSheet.es es una pagina web que funciona como un repositorio de manuales o hoja de datos de muchos de los productos más populares, |
DataSheet.es | 2020 | Privacy Policy | Contacto | Buscar |