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PDF RFP4N35 Data sheet ( Hoja de datos )
| Número de pieza | RFP4N35 | |
| Descripción | 4A/ 350V and 400V/ 2.000 Ohm/ N-Channel Power MOSFETs | |
| Fabricantes | Intersil Corporation | |
| Logotipo |  |
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Semiconductor
RFM4N35, RFM4N40, RFP4N35, RFP4N40
Data Sheet
October 1998 File Number 1491.3
4A, 350V and 400V, 2.000 Ohm, N-Channel
Power MOSFETs
[[ //TTiittllee These are N-channel enhancement-mode silicon-gate
(()RFM4N power field effect transistors designed for applications such
/3S5u, b-
as switching regulators, switching converters, motor drivers,
jReFctM()4N relay drivers, and drivers for high power bipolar switching
/4A0u, tho transistors requiring high speed and low gate-drive power.
rR(F)P4N3
/5K, ey-
These types can be operated directly from integrated
circuits.
wRForPd4sN4 Formerly developmental type TA17404.
(0))
//CSureb-ject
Ordering Information
a(4toAr,()
PART NUMBER
PACKAGE
BRAND
3/D5O0VCI RFM4N35
TO-204AA
RFM4N35
NanFdO
RFM4N40
TO-204AA
RFM4N40
p4d0f0-V, RFP4N35
TO-220AB
RFP4N35
m2.0ar0k0
RFP4N40
TO-220AB
RFP4N40
Ohm, N- NOTE: When ordering, use the entire part number.
[Channel
P/Poawgeer- Packaging
MMoOdSe-
F/UEsTes-)
O/Auut-thor
l(i)nes
//DKeOyC- -
DRAIN
(FLANGE)
VwoIErdWs
p(Hdfa-rris
mSeamrki-
conduc-
JEDEC TO-204AA
tor, N-
Channel
GATE (PIN 1)
SOURCE (PIN 2)
Power
MOS-
FETs,
TO-
204AA,
TO-
220AB)
/Creator
()
Features
• 4A, 350V and 400V
• rDS(ON) = 2.000Ω
• Related Literature
- TB334 “Guidelines for Soldering Surface Mount
Components to PC Boards”
Symbol
D
G
S
JEDEC TO-220AB
DRAIN
(FLANGE)
SOURCE
DRAIN
GATE
1 CAUTION: These devices are sensitive to electrostatic discharge; follow proper IC Handling Procedures.
1-800-4-HARRIS | Copyright © Harris Corporation 1998
1 page | ||
| Páginas | Total 4 Páginas | |
| PDF Descargar | [ Datasheet RFP4N35.PDF ] | |
Hoja de datos destacado
| Número de pieza | Descripción | Fabricantes |
| RFP4N35 | 4A/ 350V and 400V/ 2.000 Ohm/ N-Channel Power MOSFETs | Intersil Corporation |
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