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Número de pieza | RFP4N100 | |
Descripción | 4.3A/ 1000V/ 3.500 Ohm/ High Voltage/ N-Channel Power MOSFETs | |
Fabricantes | Intersil Corporation | |
Logotipo | ||
Hay una vista previa y un enlace de descarga de RFP4N100 (archivo pdf) en la parte inferior de esta página. Total 6 Páginas | ||
No Preview Available ! Data Sheet
RFP4N100, RF1S4N100SM
August 1999 File Number 2457.4
4.3A, 1000V, 3.500 Ohm, High Voltage,
N-Channel Power MOSFETs
The RFP4N100 and RFP4N100SM are N-Channel
enhancement mode silicon gate power field effect
transistors. They are designed for use in applications such
as switching regulators, switching converters, motor
drivers, relay drivers, and drivers for high power bipolar
switching transistors requiring high speed and low gate
drive power. This type can be operated directly from an
integrated circuit.
Formerly developmental type TA09850.
Ordering Information
PART NUMBER
PACKAGE
BRAND
RFP4N100
TO-220AB
RFP4N100
RF1S4N100SM
TO-263AB
F1S4N100
NOTE: When ordering, use the entire part number.
Packaging
JEDEC TO-220AB
DRAIN (FLANGE)
SOURCE
DRAIN
GATE
Features
• 4.3A, 1000V
• rDS(ON) = 3.500Ω
• UIS Rating Curve (Single Pulse)
• -55oC to 150oC Operating Temperature
• Related Literature
- TB334 “Guidelines for Soldering Surface Mount
Components to PC Boards”
Symbol
D
G
S
JEDEC TO-263AB
GATE
SOURCE
DRAIN
(FLANGE)
4-528
CAUTION: These devices are sensitive to electrostatic discharge; follow properS ESD Handling Procedures.
http://www.intersil.com or 407-727-9207 | Copyright © Intersil Corporation 1999
1 page RFP4N100, RF1S4N100SM
Typical Performance Curves TC = 25oC, Unless Otherwise Specified (Continued)
16
ID = 3.9A
12
8
VDS = 100V
VDS = 200V
VDS = 400V
4
0
0 20 40 60 80
Qg, TOTAL GATE CHARGE (nC)
FIGURE 13. GATE TO SOURCE VOLTAGE vs GATE CHARGE
Test Circuits and Waveforms
VARY tP TO OBTAIN
REQUIRED PEAK IAS
VGS
tP
0V
RG
VDS
L
DUT
+
VDD
-
IAS
0.01Ω
FIGURE 14. UNCLAMPED ENERGY TEST CIRCUIT
tP
IAS
BVDSS
VDS
VDD
0
tAV
FIGURE 15. UNCLAMPED ENERGY WAVEFORMS
RL
+
RG
VDD
-
DUT
VGS
FIGURE 16. SWITCHING TIME TEST CIRCUIT
4-532
VDS
tON
td(ON)
tr
90%
tOFF
td(OFF)
tf
90%
10%
0
VGS
10%
0
50%
PULSE WIDTH
10%
90%
50%
FIGURE 17. RESISTIVE SWITCHING WAVEFORMS
5 Page |
Páginas | Total 6 Páginas | |
PDF Descargar | [ Datasheet RFP4N100.PDF ] |
Número de pieza | Descripción | Fabricantes |
RFP4N100 | 4.3A/ 1000V/ 3.500 Ohm/ High Voltage/ N-Channel Power MOSFETs | Intersil Corporation |
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