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Número de pieza | RFP2N15 | |
Descripción | 2A/ 120V and 150V/ 1.750 Ohm/ N-Channel Power MOSFETs | |
Fabricantes | Intersil Corporation | |
Logotipo | ||
Hay una vista previa y un enlace de descarga de RFP2N15 (archivo pdf) en la parte inferior de esta página. Total 5 Páginas | ||
No Preview Available ! Semiconductor
September 1998
RFP2N12,
RFP2N15
2A, 120V and 150V, 1.750 Ohm,
N-Channel Power MOSFETs
[ /Title
(RFP2N
12,
RFP2N1
5)
/Subject
(2A,
120V
and
150V,
1.75
Ohm, N-
Channel
Power
MOS-
FETs)
/Author
()
/Key-
words
(Harris
Semi-
conduc-
tor, N-
Channel
Power
MOS-
FETs,
TO-
220AB)
/Creator
()
/DOCIN
FO pdf-
mark
Features
• 2A, 120V and 150V
• rDS(ON) = 1.750Ω
• Related Literature
- TB334 “Guidelines for Soldering Surface Mount
Components to PC Boards”
Ordering Information
PART NUMBER
PACKAGE
BRAND
RFP2N12
TO-220AB
RFP2N12
RFP2N15
TO-220AB
RFP2N15
NOTE: When ordering, include the entire part number.
Description
These are N-Channel enhancement mode silicon gate
power field effect transistors designed for applications such
as switching regulators, switching converters, motor drivers,
relay drivers and drivers for high power bipolar switching
transistors requiring high speed and low gate drive power.
These types can be operated directly from integrated cir-
cuits.
Formerly developmental type TA09196.
Symbol
D
G
S
Packaging
JEDEL TO-220AB
DRAIN
(FLANGE)
SOURCE
DRAIN
GATE
[ /Page-
Mode
CAUTION: These devices are sensitive to electrostatic discharge. Users should follow proper ESD Handling Procedures.
Copyright © Harris Corporation 1998
5-1
File Number 2882.1
1 page Test Circuits and Waveforms
RFP2N12, RFP2N15
RL
+
RG
VDD
-
DUT
VGS
FIGURE 11. SWITCHING TIME TEST CIRCUIT
VDS
tON
td(ON)
tr
90%
tOFF
td(OFF)
tf
90%
10%
0
VGS
10%
0
50%
PULSE WIDTH
10%
90%
50%
FIGURE 12. RESISTIVE SWITCHING WAVEFORMS
CURRENT
REGULATOR
12V
BATTERY
0.2µF 50kΩ
0.3µF
VDS
(ISOLATED
SUPPLY)
SAME TYPE
AS DUT
D
G DUT
IG(REF)
0
S
VDS
IG CURRENT
ID CURRENT
SAMPLING
SAMPLING
RESISTOR
RESISTOR
FIGURE 13. GATE CHARGE TEST CIRCUIT
VDD
Qgs
Qg(TOT)
Qgd
VGS
VDS
0
IG(REF)
0
FIGURE 14. GATE CHARGE WAVEFORMS
5-5
5 Page |
Páginas | Total 5 Páginas | |
PDF Descargar | [ Datasheet RFP2N15.PDF ] |
Número de pieza | Descripción | Fabricantes |
RFP2N10 | 2A/ 80V and 100V/ 1.05 Ohm/ N-Channel Power MOSFETs | Intersil Corporation |
RFP2N10 | 2A 80V AND 100V 1.05 OHM N-CHANNEL POWER MOSFETS | New Jersey Semiconductor |
RFP2N10L | 2A/ 80V and 100V/ 1.050 Ohm/ Logic Level/ N-Channel Power MOSFETs | Intersil Corporation |
RFP2N10L | Trans MOSFET N-CH 100V 2A 3-Pin(3+Tab) TO-220AB | New Jersey Semiconductor |
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