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PDF RFP15N05 Data sheet ( Hoja de datos )

Número de pieza RFP15N05
Descripción 15A/ 50V and 60V/ 0.140 Ohm/ Logic Level N-Channel Power MOSFETs
Fabricantes Fairchild Semiconductor 
Logotipo Fairchild Semiconductor Logotipo



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Data Sheet
RFP15N05L, RFP15N06L
January 2002
15A, 50V and 60V, 0.140 Ohm, Logic Level
N-Channel Power MOSFETs
These are N-Channel enhancement mode silicon gate
power field effect transistors designed for applications such
as switching regulators, switching converters, motor drivers,
relay drivers and drivers for high power bipolar switching
transistors requiring high speed and low gate drive power.
These types can be operated directly from integrated
circuits.
Formerly developmental type TA0522.
Ordering Information
PART NUMBER
PACKAGE
BRAND
RFP15N05L
TO-220AB
RFP15N05L
RFP15N06L
TO-220AB
RFP15N06L
NOTE: When ordering, use the entire part number.
Features
• 15A, 50V and 60V
• rDS(ON) = 0.140
• Design Optimized for 5V Gate Drives
• Can be Driven from QMOS, NMOS, TTL Circuits
• Compatible with Automotive Drive Requirements
• SOA is Power Dissipation Limited
• Nanosecond Switching Speeds
• Linear Transfer Characteristics
• High Input Impedance
• Majority Carrier Device
• Related Literature
- TB334 “Guidelines for Soldering Surface Mount
Components to PC Boards”
Symbol
D
Packaging
G
S
JEDEC TO-220AB
DRAIN
(TAB)
SOURCE
DRAIN
GATE
©2002 Fairchild Semiconductor Corporation
RFP15N05L, RFP15N06L Rev. B

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RFP15N05 pdf
RFP15N05L, RFP15N06L
Test Circuits and Waveforms (Continued)
VGS
IG(REF)
VDS
RL
DUT
+
VDD
-
FIGURE 12. GATE CHARGE TEST CIRCUIT
VDD
VDS
Qg(TOT)
VGS
VGS = 1V
0
IG(REF)
0
Qg(5)
Qg(TH)
VGS = 5V
VGS = 10V
FIGURE 13. GATE CHARGE WAVEFORMS
©2002 Fairchild Semiconductor Corporation
RFP15N05L, RFP15N06L Rev. B

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