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PDF RFP12N10 Data sheet ( Hoja de datos )
| Número de pieza | RFP12N10 | |
| Descripción | 12A/ 80V and 100V/ 0.200 Ohm/ N-Channel Power MOSFETs | |
| Fabricantes | Intersil Corporation | |
| Logotipo |  |
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Semiconductor
RFM12N08, RFM12N10, RFP12N08, RFP12N10
Data Sheet
October 1998 File Number 1386.2
12A, 80V and 100V, 0.200 Ohm, N-Channel
Power MOSFETs
[ /Title
(RFM12 These are N-Channel enhancement mode silicon gate
N08,
RFM12
N10,
RFP12
N08,
power field effect transistors designed for applications such
as switching regulators, switching converters, motor drivers,
relay drivers and drivers for high power bipolar switching
transistors requiring high speed and low gate drive power.
These types can be operated directly from integrated
circuits.
RFP12 Formerly developmental type TA09594.
N10)
/Sub- Ordering Information
ject
(12A,
PART NUMBER
PACKAGE
BRAND
80V and
100V,
0.2
RFM12N08
RFM12N10
TO-204AA
TO-204AA
RFM12N08
RFM12N10
Ohm,
RFP12N08
TO-220AB
RFP12N08
N-Chan- RFP12N10
TO-220AB
RFP12N10
nel
Power
NOTE: When ordering, use the entire part number.
MOS-
FETs) Packaging
/Author
()
JEDEC TO-204AA
/Key-
words
DRAIN
(FLANGE)
(Harris
Semi-
conduc-
tor, N-
Chan-
nel
GATE (PIN 1)
SOURCE (PIN 2)
Power
MOS-
FETs,
TO-
204AA,
TO-
220AB)
/Cre-
Features
• 12A, 80V and 100V
• rDS(ON) = 0.200Ω
• Related Literature
- TB334 “Guidelines for Soldering Surface Mount
Components to PC Boards”
Symbol
D
G
S
DRAIN
(TAB)
JEDEC TO-220AB
SOURCE
DRAIN
GATE
1 CAUTION: These devices are sensitive to electrostatic discharge; follow proper IC Handling Procedures.
1-800-4-HARRIS | Copyright © Harris Corporation 1998
1 page  
RFM12N08, RFM12N10, RFP12N08, RFP12N10
Test Circuits and Waveforms
RL
+
RG
VDD
-
DUT
VGS
FIGURE 11. SWITCHING TIME TEST CIRCUIT
CURRENT
REGULATOR
12V
BATTERY
0.2µF 50kΩ
0.3µF
VDS
(ISOLATED
SUPPLY)
SAME TYPE
AS DUT
D
G DUT
IG(REF)
0
S
VDS
IG CURRENT
ID CURRENT
SAMPLING
SAMPLING
RESISTOR
RESISTOR
FIGURE 13. GATE CHARGE TEST CIRCUIT
VDS
tON
td(ON)
tr
90%
tOFF
td(OFF)
tf
90%
10%
0
VGS
10%
0
50%
PULSE WIDTH
10%
90%
50%
FIGURE 12. RESISTIVE SWITCHING WAVEFORMS
VDD
Qgs
0
Qg(TOT)
Qgd
VGS
VDS
IG(REF)
0
FIGURE 14. GATE CHARGE WAVEFORMS
5
5 Page | ||
| Páginas | Total 5 Páginas | |
| PDF Descargar | [ Datasheet RFP12N10.PDF ] | |
Hoja de datos destacado
| Número de pieza | Descripción | Fabricantes |
| RFP12N10 | 12A/ 80V and 100V/ 0.200 Ohm/ N-Channel Power MOSFETs | Intersil Corporation |
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| RFP12N10L | N-Channel Logic Level Power MOSFET |  Fairchild Semiconductor |
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