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PDF RFL4N12 Data sheet ( Hoja de datos )
| Número de pieza | RFL4N12 | |
| Descripción | 4A/ 120V and 150V/ 0.400 Ohm/ N-Channel Power MOSFETs | |
| Fabricantes | Intersil Corporation | |
| Logotipo |  |
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Semiconductor
September 1998
RFL4N12,
RFL4N15
4A, 120V and 150V, 0.400 Ohm,
N-Channel Power MOSFETs
[ /Title
(RFL4N
12,
RFL4N1
5)
/Subject
(4A,
120V
and
150V,
0.400
Ohm, N-
Channel
Power
MOS-
FETs)
/Author
()
/Key-
words
(Harris
Semi-
conduc-
tor, N-
Channel
Power
MOS-
FETs,
TO-
205AF)
/Creator
()
/DOCIN
FO pdf-
mark
Features
• 4A, 120V and 150V
• rDS(ON) = 0.400Ω
• SOA is Power Dissipation Limited
• Nanosecond Switching Speeds
• Linear Transfer Characteristics
• High Input Impedance
• Majority Carrier Device
Ordering Information
PART NUMBER
PACKAGE
BRAND
RFL4N12
TO-205AF
RFL4N12
RFL4N15
TO-205AF
RFL4N15
NOTE: When ordering, use the entire part number.
Description
These are N-Channel enhancement mode silicon gate
power field effect transistors designed for applications such
as switching regulators, switching converters, motor drivers,
relay drivers and drivers for high power bipolar switching
transistors requiring high speed and low gate drive power.
These types can be operated directly from integrated
circuits.
Formerly developmental type TA9192.
Symbol
D
G
S
Packaging
JEDEC TO-205AF
DRAIN
(CASE)
GATE
SOURCE
CAUTION: These devices are sensitive to electrostatic discharge. Users should follow proper ESD Handling Procedures.
Copyright © Harris Corporation 1998
5-1
File Number 1462.2
1 page | ||
| Páginas | Total 4 Páginas | |
| PDF Descargar | [ Datasheet RFL4N12.PDF ] | |
Hoja de datos destacado
| Número de pieza | Descripción | Fabricantes |
| RFL4N12 | 4A/ 120V and 150V/ 0.400 Ohm/ N-Channel Power MOSFETs | Intersil Corporation |
| RFL4N15 | 4A/ 120V and 150V/ 0.400 Ohm/ N-Channel Power MOSFETs | Intersil Corporation |
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