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PDF RFL2N06L Data sheet ( Hoja de datos )
| Número de pieza | RFL2N06L | |
| Descripción | 2A/ 60V/ 0.950 Ohm/ Logic Level/ N-Channel Power MOSFET | |
| Fabricantes | Intersil Corporation | |
| Logotipo |  |
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Data Sheet
RFL2N06L
October 1999 File Number 1560.3
2A, 60V, 0.950 Ohm, Logic Level,
N-Channel Power MOSFET
The RFL2N06L N-channel enhancement mode silicon gate
power field effect transistor is designed for applications such
as switching regulators, switching converters, motor drivers,
relay drivers and drivers for high power bipolar switching
transistors requiring high speed and low gate drive power.
These types can be operated directly from integrated
circuits.
Formerly developmental type TA9520.
Ordering Information
PART NUMBER
PACKAGE
BRAND
RFL2N06L
TO-205AF
RFL2N06L
NOTE: When ordering, use the entire part number.
Features
• 2A, 50V and 60V
• rDS(ON) = 0.950Ω
• Design Optimized for 5V Gate Drives
• Can be Driven from QMOS, NMOS, TTL Circuits
• Compatible with Automotive Drive Requirements
• SOA is Power Dissipation Limited
• Nanosecond Switching Speeds
• Linear Transfer Characteristics
• High Input Impedance
• Majority Carrier Device
Symbol
D
G
S
Packaging
JEDEC TO-205AF
DRAIN
(CASE)
GATE
SOURCE
1 CAUTION: These devices are sensitive to electrostatic discharge; follow proper ESD Handling Procedures.
www.intersil.com or 407-727-9207 | Copyright © Intersil Corporation 1999
1 page  
RFL2N06L
All Intersil semiconductor products are manufactured, assembled and tested under ISO9000 quality systems certification.
Intersil semiconductor products are sold by description only. Intersil Corporation reserves the right to make changes in circuit design and/or specifications at any time with-
out notice. Accordingly, the reader is cautioned to verify that data sheets are current before placing orders. Information furnished by Intersil is believed to be accurate and
reliable. However, no responsibility is assumed by Intersil or its subsidiaries for its use; nor for any infringements of patents or other rights of third parties which may result
from its use. No license is granted by implication or otherwise under any patent or patent rights of Intersil or its subsidiaries.
For information regarding Intersil Corporation and its products, see web site www.intersil.com
Sales Office Headquarters
NORTH AMERICA
Intersil Corporation
P. O. Box 883, Mail Stop 53-204
Melbourne, FL 32902
TEL: (407) 724-7000
FAX: (407) 724-7240
EUROPE
Intersil SA
Mercure Center
100, Rue de la Fusee
1130 Brussels, Belgium
TEL: (32) 2.724.2111
FAX: (32) 2.724.22.05
ASIA
Intersil (Taiwan) Ltd.
7F-6, No. 101 Fu Hsing North Road
Taipei, Taiwan
Republic of China
TEL: (886) 2 2716 9310
FAX: (886) 2 2715 3029
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| Páginas | Total 5 Páginas | |
| PDF Descargar | [ Datasheet RFL2N06L.PDF ] | |
Hoja de datos destacado
| Número de pieza | Descripción | Fabricantes |
| RFL2N06 | 2A/ 50V and 60V/ 0.95 Ohm/ N-Channel Power MOSFETs | Intersil Corporation |
| RFL2N06 | 2A 50V AND 60V 0.95 OHM N-CHANNEL POWER MOSFETS |  New Jersey Semiconductor |
| RFL2N06L | 2A/ 60V/ 0.950 Ohm/ Logic Level/ N-Channel Power MOSFET | Intersil Corporation |
| RFL2N06L | Trans MOSFET N-CH 50V 2A 3-Pin TO-205AF | New Jersey Semiconductor |
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