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PDF RFL2N05 Data sheet ( Hoja de datos )

Número de pieza RFL2N05
Descripción 2A/ 50V and 60V/ 0.95 Ohm/ N-Channel Power MOSFETs
Fabricantes Intersil Corporation 
Logotipo Intersil Corporation Logotipo



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No Preview Available ! RFL2N05 Hoja de datos, Descripción, Manual

Semiconductor
January 1998
Features
• 2A, 50V and 60V
• rDS(ON) = 0.95
• SOA is Power-Dissipation Limited
• Nanosecond Switching Speeds
• Linear Transfer Characteristics
• High Input Impedance
• Majority Carrier Device
• Related Literature
- TB334 “Guidelines for Soldering Surface Mount
Components to PC Boards”
Ordering Information
PART NUMBER
PACKAGE
BRAND
RFL2N05
TO-205AF
RFL2N05
RFL2N05
TO-205AF
RFL2N05
NOTE: When ordering, include the entire part number.
RFL2N05,
RFL2N06
2A, 50V and 60V, 0.95 Ohm,
N-Channel Power MOSFETs
Description
These are N-Channel enhancement mode silicon gate
power field effect transistors designed for applications such
as switching regulators, switching converters, motor drivers,
relay drivers, and drivers for high power bipolar switching
transistors requiring high speed and low gate drive power.
These types can be operated directly from integrated
circuits.
Formerly developmental type TA09378.
Symbol
D
G
S
Packaging
JEDEC TO-205AF
DRAIN
(CASE)
GATE
SOURCE
CAUTION: These devices are sensitive to electrostatic discharge. Users should follow proper ESD Handling Procedures.
Copyright © Harris Corporation 1997
5-1
File Number 1497.2

1 page




RFL2N05 pdf
Test Circuits and Waveforms
RFL2N05, RFL2N06
RL
+
RG
VDD
-
DUT
VGS
FIGURE 12. SWITCHING TIME TEST CIRCUIT
VDS
tON
td(ON)
tr
90%
tOFF
td(OFF)
tf
90%
10%
0
10%
VGS
10%
0
50%
PULSE WIDTH
90%
50%
FIGURE 13. RESISTIVE SWITCHING WAVEFORMS
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