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PDF RFL1N12L Data sheet ( Hoja de datos )

Número de pieza RFL1N12L
Descripción 1A/ 120V and 150V/ 1.900 Ohm/ Logic Level/ N-Channel Power MOSFETs
Fabricantes Intersil Corporation 
Logotipo Intersil Corporation Logotipo



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No Preview Available ! RFL1N12L Hoja de datos, Descripción, Manual

Semiconductor
September 1998
RFL1N12L,
RFL1N15L
1A, 120V and 150V, 1.900 Ohm,
Logic Level, N-Channel Power MOSFETs
[ /Title
(RFL1N
12L,
RFL1N1
5L)
/Subject
(1A,
120V
and
150V,
1.900
Ohm,
Logic
Level,
N-Chan-
nel
Power
MOS-
FETs)
/Author
()
/Key-
words
(Harris
Semi-
conduc-
tor,
Logic
Level,
N-Chan-
nel
Power
MOS-
FETs,
TO-
205AF)
Features
• 1A, 120V and 150V
• rDS(ON) = 1.900
Ordering Information
PART NUMBER
PACKAGE
BRAND
RFL1N12L
TO-205AF
RFL1N12L
RFL1N15L
TO-205AF
RFL1N15L
NOTE: When ordering, use the entire part number.
Description
These are N-Channel enhancement mode silicon gate
power field effect transistors specifically designed for use
with logic level (5V) driving sources in applications such as
programmable controllers, automotive switching, and sole-
noid drivers. This performance is accomplished through a
special gate oxide design which provides full rated conduc-
tion at gate biases in the 3V to 5V range, thereby facilitating
true on-off power control directly from logic circuit supply
voltages.
Formerly developmental type TA09528.
Symbol
D
G
S
Packaging
JEDEC TO-205AF
DRAIN
(CASE)
GATE
SOURCE
CAUTION: These devices are sensitive to electrostatic discharge. Users should follow proper ESD Handling Procedures.
Copyright © Harris Corporation 1998
7-1
File Number 1513.2

1 page





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