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PDF RFL1N10L Data sheet ( Hoja de datos )
| Número de pieza | RFL1N10L | |
| Descripción | 1A/ 100V/ 1.200 Ohm/ Logic Level/ N-Channel Power MOSFET | |
| Fabricantes | Intersil Corporation | |
| Logotipo |  |
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RFL1N10L
September 1998
1A, 100V, 1.200 Ohm, Logic Level, N-Channel
Power MOSFET
Features
• 1A, 100V
• rDS(ON) = 1.200Ω
Ordering Information
PART NUMBER
PACKAGE
BRAND
RFL1N10L
TO-205AF
RFL1N10L
NOTE: When ordering, use the entire part number.
Description
This is an N-Channel enhancement mode silicon gate power
field effect transistor specifically designed for use with logic
level (5V) driving sources in applications such as program-
mable controllers, automotive switching, and solenoid driv-
ers. This performance is accomplished through a special
gate oxide design which provides full rated conduction at
gate biases in the 3V to 5V range, thereby facilitating true
on-off power control directly from logic circuit supply volt-
ages.
Formerly developmental type TA09524.
Symbol
D
G
S
Packaging
JEDEC TO-205AF
DRAIN
(CASE)
GATE
SOURCE
CAUTION: These devices are sensitive to electrostatic discharge; follow proper ESD Handling Procedures.
http://www.intersil.com or 407-727-9207 | Copyright © Intersil Corporation 1999
1
File Number 1510.3
1 page  
RFL1N10L
All Intersil semiconductor products are manufactured, assembled and tested under ISO9000 quality systems certification.
Intersil products are sold by description only. Intersil Corporation reserves the right to make changes in circuit design and/or specifications at any time without
notice. Accordingly, the reader is cautioned to verify that data sheets are current before placing orders. Information furnished by Intersil is believed to be accurate
and reliable. However, no responsibility is assumed by Intersil or its subsidiaries for its use; nor for any infringements of patents or other rights of third parties which
may result from its use. No license is granted by implication or otherwise under any patent or patent rights of Intersil or its subsidiaries.
For information regarding Intersil Corporation and its products, see web site http://www.intersil.com
Sales Office Headquarters
NORTH AMERICA
Intersil Corporation
P. O. Box 883, Mail Stop 53-204
Melbourne, FL 32902
TEL: (407) 724-7000
FAX: (407) 724-7240
EUROPE
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Mercure Center
100, Rue de la Fusee
1130 Brussels, Belgium
TEL: (32) 2.724.2111
FAX: (32) 2.724.22.05
ASIA
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Taiwan Limited
7F-6, No. 101 Fu Hsing North Road
Taipei, Taiwan
Republic of China
TEL: (886) 2 2716 9310
FAX: (886) 2 2715 3029
5
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| Páginas | Total 5 Páginas | |
| PDF Descargar | [ Datasheet RFL1N10L.PDF ] | |
Hoja de datos destacado
| Número de pieza | Descripción | Fabricantes |
| RFL1N10 | 1A/ 80V and 100V/ 1.200 Ohm/ N-Channel/ Power MOSFETs | Intersil Corporation |
| RFL1N10 | 1A 80V AND 100V 1.200 OHM N-CHANNEL POWER MOSFETS |  New Jersey Semiconductor |
| RFL1N10L | 1A/ 100V/ 1.200 Ohm/ Logic Level/ N-Channel Power MOSFET | Intersil Corporation |
| RFL1N10L | 1A 80V AND 100V 1.200 OHM N-CHANNEL POWER MOSFETS | New Jersey Semiconductor |
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