PDF RFG60P06E Data sheet ( Hoja de datos )

Número de pieza	RFG60P06E
Descripción	60A/ 60V/ 0.030 Ohm/ ESD Rated/ P-Channel Power MOSFET
Fabricantes	Fairchild Semiconductor
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No Preview Available ! Data Sheet January 2002 RFG60P06E 60A, 60V, 0.030 Ohm, ESD Rated, P-Channel Power MOSFET The RFG60P06E P-Channel power MOSFET is manufactured using the MegaFET process. This process, which uses feature sizes approaching those of LSI circuits gives optimum utilization of silicon, resulting in outstanding performance. They were designed for use in applications such as switching regulators, switching converters, motor drivers and relay drivers. These transistors can be operated directly from integrated circuits. The RFG60P06E incorporates ESD protection and is designed to withstand 2kV (Human Body Model) of ESD. Formerly developmental type TA09836. Ordering Information PART NUMBER PACKAGE BRAND RFG60P06E TO-247 RFG60P06E NOTE: When ordering use the entire part numberr RFG60P06E. Features • 60A, 60V • rDS(ON) = 0.030Ω • Temperature Compensating PSPICE® Model • 2kV ESD Rated • Peak Current vs Pulse Width Curve • UIS Rating Curve • 175oC Operating Temperature • Related Literature Symbol D G S Packaging JEDEC STYLE TO-247 DRAIN (BOTTOM SIDE METAL) SOURCE DRAIN GATE ©2002 Fairchild Semiconductor Corporation RFG60P06E Rev. B 1 page RFG60P06E Typical Performance Curves Unless Otherwise Speciﬁed (Continued) 8000 6000 VGS = 0V, f = 1MHz 4000 CISS VGS = 0V, f = 1MHz CISS = CGS + CGD CRSS = CGD COSS ≈ CDS + CGS 2000 COSS CRSS 0 0 -5 -10 -15 -20 -25 VDS, DRAIN TO SOURCE VOLTAGE (V) FIGURE 12. CAPACITANCE vs DRAIN TO SOURCE VOLTAGE -60 -10 VDD = BVDSS VDD = BVDSS -45 -7.5 RL = 1.0Ω IG(REF) = -4mA VGS = -10V -30 -5.0 0.75 BVDSS 0.75 BVDSS -15 0.50 BVDSS 0.25 BVDSS 0.50 BVDSS 0.25 BVDSS -2.5 0 IG(REF) 20 IG(ACT) t, TIME (µs) IG(REF) 80 IG(ACT) 0 NOTE: Refer to Fairchild Application Notes AN7254 and AN7260. FIGURE 13. NORMALIZED SWITCHING WAVEFORMS FOR CONSTANT GATE CURRENT Test Circuits and Waveforms VARY tP TO OBTAIN REQUIRED PEAK IAS 0V VGS tP RG VDS L DUT - VDD + IAS 0.01Ω FIGURE 14. UNCLAMPED ENERGY TEST CIRCUIT VGS VGS RGS VDS RL DUT - VDD + FIGURE 16. SWITCHING TIME TEST CIRCUIT ©2002 Fairchild Semiconductor Corporation tAV 0 VDD IAS tP BVDSS VDS FIGURE 15. UNCLAMPED ENERGY WAVEFORMS tON td(ON) tr 0 10% tOFF td(OFF) tf 10% VDS 90% 0 10% VGS 50% PULSE WIDTH 90% 50% 90% FIGURE 17. RESISTIVE SWITCHING WAVEFORMS RFG60P06E Rev. B 5 Page

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Número de pieza	Descripción	Fabricantes
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