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PDF RFF60P06 Data sheet ( Hoja de datos )

Número de pieza RFF60P06
Descripción 25A/ 60V/ 0.030 Ohm/ P-Channel Power MOSFET
Fabricantes Intersil Corporation 
Logotipo Intersil Corporation Logotipo



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Data Sheet
RFF60P06
September 1998 File Number 3975.2
25A†, 60V, 0.030 Ohm, P-Channel Power
MOSFET
The RFF60P06 P-Channel power MOSFET is manufactured
using the MegaFET process. This process, which uses
feature sizes approaching those of LSI circuits gives
optimum utilization of silicon, resulting in outstanding
performance. It was designed for use in applications such as
switching regulators, switching converters, motor drivers,
and relay drivers. These transistors can be operated directly
from integrated circuits.
Reliability screening is available as either commercial or
TX/TXV equivalent of MIL-S-19500. Contact Intersil
Corporation High-Reliability Marketing group for any desired
deviations from the data sheet.
Formerly developmental type TA09835.
Commercial Version: RFG60P06E.
† Current is limited by the package capability.
Ordering Information
PART NUMBER
PACKAGE
BRAND
RFF60P06
TO-254AA
RFF60P06
NOTE: When ordering, use the entire part number.
Features
• 25A, 60V
• rDS(ON) = 0.030
• Temperature Compensating PSPICE® Model
• Peak Current vs Pulse Width Curve
• UIS Rating Curve
• 150oC Operating Temperature
• Reliability Screened
Symbol
D
G
S
Packaging
JEDEC TO-254AA
PACKAGE TAB
(ISOLATED)
GATE
SOURCE
DRAIN
CAUTION: Berylia Warning per MIL-S-19500.
Refer to package specifications.
4-181
CAUTION: These devices are sensitive to electrostatic discharge; follow proper ESD Handling Procedures.
PSPICE® is a registered trademark of MicroSim Corporation.
http://www.intersil.com or 407-727-9207 | Copyright © Intersil Corporation 1999.

1 page




RFF60P06 pdf
RFF60P06
Typical Performance Curves Unless Otherwise Specified (Continued)
8000
6000
4000
2000
0
0
CISS
VGS = 0V, f = 0.1MHz
CISS = CGS + CGD
CRSS = CGD
COSS CDS + CGS
COSS
CRSS
-5 -10 -15 -20
VDS, DRAIN TO SOURCE VOLTAGE (V)
-25
FIGURE 12. CAPACITANCE vs DRAIN TO SOURCE VOLTAGE
-60
VDD = BVDSS
-45
-10
VDD = BVDSS
-7.5
-30 RL = 1.0
IG(REF) = 4.2mA
VGS = -10V
0.75 BVDSS 0.75 BVDSS
-15 0.50 BVDSS 0.50 BVDSS
0.25 BVDSS 0.25 BVDSS
-5.0
-2.5
00
IG(REF)
20
IG(ACT)
t, TIME (µs)
IG(REF)
80
IG(ACT)
NOTE: Refer to Intersil Application Notes AN7254 and AN7260.
FIGURE 13. NORMALIZED SWITCHING WAVEFORMS FOR
CONSTANT GATE CURRENT
Test Circuit and Waveforms
VDS
VARY tP TO OBTAIN
REQUIRED PEAK IAS
0V
VGS
tP
RG
L
DUT
-
VDD
+
IAS
0.01
tAV
0
VDD
IAS
tP
BVDSS
VDS
FIGURE 14. UNCLAMPED ENERGY TEST CIRCUIT
FIGURE 15. UNCLAMPED ENERGY WAVEFORMS
VGS
VGS
RGS
VDS
RL
DUT
-
VDD
+
FIGURE 16. SWITCHING TIME TEST CIRCUIT
tON
td(ON)
tr
0
10%
tOFF
td(OFF)
tf
10%
VDS
VGS
0
90%
10%
50%
PULSE WIDTH
90%
50%
90%
FIGURE 17. RESISTIVE SWITCHING WAVEFORMS
4-185

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