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PDF RFD16N05 Data sheet ( Hoja de datos )

Número de pieza RFD16N05
Descripción 16A/ 50V/ 0.047 Ohm/ Logic Level/ N-Channel Power MOSFETs
Fabricantes Intersil Corporation 
Logotipo Intersil Corporation Logotipo



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Data Sheet
RFD16N05, RFD16N05SM
July 1999
File Number 2267.5
16A, 50V, 0.047 Ohm, N-Channel Power
MOSFETs
The RFD16N05 and RFD16N05SM N-channel power
MOSFETs are manufactured using the MegaFET process.
This process, which uses feature sizes approaching those of
LSI integrated circuits, gives optimum utilization of silicon,
resulting in outstanding performance. They were designed
for use in applications such as switching regulators,
switching converters, motor drivers, and relay drivers. These
transistors can be operated directly from integrated circuits.
Formerly developmental type TA09771.
Ordering Information
PART NUMBER
PACKAGE
BRAND
RFD16N05
TO-251AA
F16N05
RFD16N05SM
TO-252AA
F16N05
NOTE: When ordering, use the entire part number. Add the suffix 9A to
obtain the TO-252AA variant in the tape and reel, i.e., RFD16N05SM9A.
Packaging
JEDEC TO-251AA
DRAIN (FLANGE)
SOURCE
DRAIN
GATE
Features
• 16A, 50V
• rDS(ON) = 0.047
• Temperature Compensating PSPICE® Model
• Peak Current vs Pulse Width Curve
• UIS Rating Curve
• 175oC Operating Temperature
• Related Literature
- TB334 “Guidelines for Soldering Surface Mount
Components to PC Boards”
Symbol
D
G
S
JEDEC TO-252AA
DRAIN (FLANGE)
GATE
SOURCE
4-420
CAUTION: These devices are sensitive to electrostatic discharge; follow proper ESD Handling Procedures.
PSPICE® is a registered trademark of MicroSim Corporation.
http://www.intersil.com or 407-727-9207 | Copyright © Intersil Corporation 1999

1 page




RFD16N05 pdf
RFD16N05, RFD16N05SM
Typical Performance Curves Unless Otherwise Specified (Continued)
1600
1200
800
400
0
0
CISS
VGS = 0V, f = 1MHz
CISS = CGS + CGD
CRSS = CGD
COSS CDS + CGS
COSS
CRSS
5 10 15 20
VDS, DRAIN TO SOURCE VOLTAGE (V)
25
FIGURE 12. CAPACITANCE vs DRAIN TO SOURCE VOLTAGE
50
37.5
VDD = BVDSS
VDD = BVDSS
10
7.5
25
12.5
0.75 BVDSS
0.50 BVDSS
0.25 BVDSS
RL = 3.125
IG(REF) = 0.8mA
VGS = 10V
0
20 I-I-G-G-----((--AR-----CE----F-T---)-)
t, TIME (ms)
80 I-I-GG-----((--AR----CE----FT----))
5
2.5
0
NOTE: Refer to Intersil Application Notes AN7254 and AN7260.
FIGURE 13. NORMALIZED SWITCHING WAVEFORMS FOR
CONSTANT GATE CURRENT
Test Circuits and Waveforms
VARY tP TO OBTAIN
REQUIRED PEAK IAS
VGS
tP
0V
RG
VDS
L
DUT
+
VDD
-
IAS
0.01
FIGURE 14. UNCLAMPED ENERGY TEST CIRCUIT
tP
IAS
BVDSS
VDS
VDD
0
tAV
FIGURE 15. UNCLAMPED ENERGY WAVEFORMS
VDS
VGS
RGS
RL
DUT
+
VDD
-
VGS
FIGURE 16. SWITCHING TIME TEST CIRCUIT
VDS
tON
td(ON)
tr
90%
tOFF
td(OFF)
tf
90%
10%
0
VGS
10%
0
50%
PULSE WIDTH
10%
90%
50%
FIGURE 17. RESISTIVE SWITCHING WAVEFORMS
4-424

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