PDF RFD16N03 Data sheet ( Hoja de datos )

Número de pieza	RFD16N03
Descripción	16A/ 30V/ 0.025 Ohm/ Logic Level/ N-Channel Power MOSFETs
Fabricantes	Intersil Corporation
Logotipo
Hay una vista previa y un enlace de descarga de RFD16N03 (archivo pdf) en la parte inferior de esta página. Total 8 Páginas
No Preview Available ! Data Sheet RFD16N03L, RFD16N03LSM April 1999 File Number 4013.2 16A, 30V, 0.025 Ohm, Logic Level, N-Channel Power MOSFETs These are N-Channel power MOSFETs manufactured using the MegaFET process. This process, which uses feature sizes approaching those of LSI circuits, gives optimum utilization of silicon, resulting in outstanding performance. They were designed for use in applications such as switching regulators, switching converters, motor drivers and relay drivers. This performance is accomplished through a special gate oxide design which provides full rated conductance at gate bias in the 3V to 5V range, thereby facilitating true on-off power control directly from logic level (5V) integrated circuits. Formerly developmental type TA49030. Ordering InformationS PART NUMBER PACKAGE BRAND RFD16N03L TO-251AA 16N03L RFD16N03LSM TO-252AA 16N03L NOTE: When ordering, use the entire part number. Add the suffix 9A, to obtain the TO-252AA variant in tape and reel, e.g. RFD16N03LSM9A. Features • 16A, 30V • rDS(ON) = 0.025Ω • Temperature Compensating PSPICE™ Model • Can be Driven Directly from CMOS, NMOS, and TTL Circuits • Peak Current vs Pulse Width Curve • UIS Rating Curve • 175oC Operating Temperature • Related Literature - TB334 “Guidelines for Soldering Surface Mount Components to PC Boards” Symbol DRAIN GATE SOURCE Packaging DRAIN (FLANGE) JEDEC TO-251AA SOURCE DRAIN GATE JEDEC TO-252AA DRAIN (FLANGE) GATE SOURCE 6-156 CAUTION: These devices are sensitive to electrostatic discharge; follow proper ESD Handling Procedures. PSPICE™ is a trademark of MicroSim Corporation. http://www.intersil.com or 407-727-9207 \| Copyright © Intersil Corporation 1999 1 page RFD16N03L, RFD16N03LSM Typical Performance Curves Unless Otherwise Speciﬁed (Continued) 2.0 VGS = VDS, ID = 250µA 1.5 2.0 ID = 250µA 1.5 1.0 1.0 0.5 0.5 0 -80 -40 0 40 80 120 160 200 TJ, JUNCTION TEMPERATURE (oC) FIGURE 12. NORMALIZED GATE THRESHOLD VOLTAGE vs JUNCTION TEMPERATURE 2500 VGS = 0V, f = 1MHz 2000 CISS 1500 1000 500 0 0 CISS = CGS + CGD CRSS = CGD COSS ≈ CDS + CGD COSS CRSS 5 10 15 20 VDS, DRAIN TO SOURCE VOLTAGE (V) 25 FIGURE 14. CAPACITANCE vs DRAIN TO SOURCE VOLTAGE Test Circuits and Waveforms VDS VARY tP TO OBTAIN REQUIRED PEAK IAS VGS tP 0V RG L DUT + VDD - IAS 0.01Ω 0 -80 -40 0 40 80 120 160 200 TJ, JUNCTION TEMPERATURE (oC) FIGURE 13. NORMALIZED DRAIN TO SOURCE BREAKDOWN VOLTAGE vs JUNCTION TEMPERATURE 30 VDD = BVDSS 24 VDD = BVDSS 5 4 18 3 12 0.75 BVDSS 0.50 BVDSS 0.25 BVDSS 2 6 RL = 1.875Ω IG(REF) = 0.6mA 1 VGS = 5V 00 IG(REF) IG(REF) 20 IG(ACT) t, TIME (s) 80 IG(ACT) NOTE: Refer to Intersil Application Notes AN7254 and AN7260. FIGURE 15. NORMALIZED SWITCHING WAVEFORMS FOR CONSTANT GATE CURRENT tP IAS BVDSS VDS VDD 0 tAV FIGURE 16. UNCLAMPED ENERGY TEST CIRCUIT FIGURE 17. UNCLAMPED ENERGY WAVEFORMS 6-160 5 Page

Páginas	Total 8 Páginas
PDF Descargar	[ Datasheet RFD16N03.PDF ]

Hoja de datos destacado

Número de pieza	Descripción	Fabricantes
RFD16N02	16A/ 20V/ 0.022 Ohm/ N-Channel/ Logic Level/ Power MOSFET	Intersil Corporation
RFD16N02L	16A/ 20V/ 0.022 Ohm/ N-Channel/ Logic Level/ Power MOSFET	Intersil Corporation
RFD16N02LSM	16A/ 20V/ 0.022 Ohm/ N-Channel/ Logic Level/ Power MOSFET	Intersil Corporation
RFD16N03	16A/ 30V/ 0.025 Ohm/ Logic Level/ N-Channel Power MOSFETs	Intersil Corporation

Número de pieza	Descripción	Fabricantes
SLA6805M	High Voltage 3 phase Motor Driver IC.	Sanken
SDC1742	12- and 14-Bit Hybrid Synchro / Resolver-to-Digital Converters.	Analog Devices

DataSheet.es es una pagina web que funciona como un repositorio de manuales o hoja de datos de muchos de los productos más populares,
permitiéndote verlos en linea o descargarlos en PDF.

DataSheet.es | 2020 | Privacy Policy | Contacto | Buscar