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PDF RFD14N05SM Data sheet ( Hoja de datos )

Número de pieza RFD14N05SM
Descripción 14A/ 50V/ 0.100 Ohm/ N-Channel Power MOSFETs
Fabricantes Fairchild Semiconductor 
Logotipo Fairchild Semiconductor Logotipo



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RFD14N05, RFD14N05SM, RFP14N05
Data Sheet
January 2002
14A, 50V, 0.100 Ohm, N-Channel Power
MOSFETs
These are N-channel power MOSFETs manufactured using
the MegaFET process. This process, which uses feature
sizes approaching those of LSI integrated circuits, gives
optimum utilization of silicon, resulting in outstanding
performance. They were designed for use in applications
such as switching regulators, switching converters, motor
drivers and relay drivers. These transistors can be operated
directly from integrated circuits.
Formerly developmental type TA09770.
Ordering Information
PART NUMBER
PACKAGE
BRAND
RFD14N05
RFD1 4N05SM
R F P 14N0 5
TO-251AA
TO-252AA
TO-220AB
D14N05
D14N05
RFP14N05
NOTE: When ordering, use the entire part number. Add the suffix 9A to
obtain the TO-252AA variant in the tape and reel, i.e., RFD14N05SM9A.
Features
• 14A, 50V
• rDS(ON) = 0.100
• Temperature Compensating PSPICE® Model
• Peak Current vs Pulse Width Curve
• UIS Rating Curve
• 175oC Operating Temperature
• Related Literature
- TB334 “Guidelines for Soldering Surface Mount
Components to PC Boards”
Symbol
D
G
S
Packaging
JEDEC TO-251AA
DRAIN (FLANGE)
SOURCE
DRAIN
GATE
JEDEC TO-252AA
GATE
SOURCE
DRAIN (FLANGE)
JEDEC TO-220AB
DRAIN (FLANGE)
SOURCE
DRAIN
GATE
©2002 Fairchild Semiconductor Corporation
RFD14N05, RFD14N05SM, RFP14N05 Rev. B1

1 page




RFD14N05SM pdf
RFD14N05, RFD14N05SM, RFP14N05
Typical Performance Curves Unless Otherwise Specified (Continued)
700
CISS
600
500
VGS = 0V, f = 1MHz
400
COSS
CISS = CGS + C GD
CRSS = C G D
COSS CDS + CG D
300
200
CRSS
100
0
0
5
10 15 20
25
VDS, DRAIN TO SOURCE VOLTAGE (V)
FIGURE 12. CAPACITANCE vs DRAIN TO SOURCE VOLTAGE
60
VDD = BV DSS
45
V DD = BVDSS
10
7.5
30 5.0
15
0.75
0.50
0.25
BBBVVVDDDSSSSSS
2.5
RL = 3.57
IG(REF) = 0.4mA
VGS = 10V
00
2 0I--G-----(---R----E-----F---)
IG(ACT )
t, TIME (µs)
8 0I--G-----(---R----E-----F---)
IG(ACT )
NOTE: Refer to Fairchild Application Notes AN7254 and AN7260,
FIGURE 13. NORMALIZED SWITCHING WAVEFORMS FOR
CONSTANT CURRENT GATE DRIVE
Test Circuits and Waveforms
VARY t P TO OBTAIN
REQUIRED PEAK IAS
VG S
tP
0V
RG
VDS
L
DUT
+
VDD
-
IAS
0.01
FIGURE 14. UNCLAMPED ENERGY TEST CIRCUIT
tP
IAS
BV DSS
VDS
VDD
0
tAV
FIGURE 15. UNCLAMPED ENERGY WAVEFORMS
VDS
VG S
RGS
RL
DUT
+
VDD
-
VG S
FIGURE 16. SWITCHING TIME TEST CIRCUIT
©2002 Fairchild Semiconductor Corporation
VDS
tON
td(ON)
tr
90%
tOFF
t d(OFF)
tf
90%
10%
0
VGS
10%
0
50%
PULSE WIDTH
10%
90%
50%
FIGURE 17. RESISTIVE SWITCHING WAVEFORMS
RFD14N05, RFD14N05SM, RFP14N05 Rev. B1

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