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PDF RFD12N06RLESM Data sheet ( Hoja de datos )
| Número de pieza | RFD12N06RLESM | |
| Descripción | 12A/ 60V/ 0.135 Ohm/ N-Channel/ Logic Level/ Power MOSFETs | |
| Fabricantes | Intersil Corporation | |
| Logotipo |  |
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Data Sheet
RFD12N06RLE, RFD12N06RLESM,
RFP12N06RLE
July 1999
File Number 2407.4
[ /Title
(RFD1
2N06R
LE,
RFD12
N06RL
ESM,
RFP12
N06RL
E)
/Sub-
ject
(12A,
60V,
0.135
Ohm,
N-
Chan-
nel,
Logic
Level,
Power
MOS-
FETs)
/Autho
r ()
/Key-
words
(Inter-
sil
Corpo-
ration,
N-
Chan-
nel,
Logic
Level,
Power
MOS-
12A, 60V, 0.135 Ohm, N-Channel, Logic
Level, Power MOSFETs
These N-Channel logic level ESD protected power
MOSFETs are manufactured using the MegaFET process.
This process, which uses feature sizes approaching those of
LSI integrated circuits, gives optimum utilization of silicon,
resulting in outstanding performance. They were designed
for use with logic level (5V) driving sources in applications
such as programmable controllers, automotive switching,
switching regulators, switching converters, motor drivers,
relay drivers, and emitter switches for bipolar transistors.
This performance is accomplished through a special gate
oxide design which provides full rated conductance at gate
biases in the 3V to 5V range, thereby facilitating true on-off
power control directly from logic circuit supply voltages.
Formerly developmental type TA09861.
Ordering Information
PART NUMBER
PACKAGE
BRAND
RFD12N06RLE
TO-251AA
12N6LE
RFD12N06RLESM TO-252AA
12N6LE
RFP12N06RLE
TO-220AB
12N06RLE
NOTE: When ordering, use the entire part number. Add the suffix 9A to
obtain the TO-252AA variant in tape and reel, i.e., RFD12N06RLESM9A.
Packaging
JEDEC TO-251AA
DRAIN
(FLANGE)
SOURCE
DRAIN
GATE
Features
• 12A, 60V
• rDS(ON) = 0.135Ω
• Electrostatic Discharge Protected
• UIS Rating Curve (Single Pulse)
• Design Optimized for 5V Gate Drive
• Related Literature
- TB334 “Guidelines for Soldering Surface Mount
Components to PC Boards”
Symbol
D
G
S
JEDEC TO-252AA
GATE
SOURCE
DRAIN
(FLANGE)
JEDEC TO-220AB
DRAIN (FLANGE)
SOURCE
DRAIN
GATE
6-12
CAUTION: These devices are sensitive to electrostatic discharge; follow proper ESD Handling Procedures.
http://www.intersil.com or 407-727-9207 | Copyright © Intersil Corporation 1999
1 page  
RFD12N06RLE, RFD12N06RLESM, RFP12N06RLE
Test Circuits and Waveforms
VARY tP TO OBTAIN
REQUIRED PEAK IAS
VGS
RG
tP
0V
VDS
L
DUT
+
VDD
-
IAS
0.01Ω
FIGURE 13. UNCLAMPED ENERGY TEST CIRCUIT
tP
IAS
BVDSS
VDS
VDD
0
tAV
FIGURE 14. UNCLAMPED ENERGY WAVEFORMS
VGS
0V
VGS
RGS
RL
VDS
+
-
DUT
FIGURE 15. SWITCHING TIME TEST CIRCUIT
VDS
RL
VGS
Ig(REF)
DUT
+
VDD
-
FIGURE 17. GATE CHARGE TEST CIRCUIT
VDS
tON
td(ON)
tr
90%
tOFF
td(OFF)
tf
90%
10%
0
VGS
10%
0
50%
PULSE WIDTH
10%
90%
50%
FIGURE 16. RESISTIVE SWITCHING WAVEFORMS
VDD
VDS
Qg(TOT)
VGS
VGS = 1V
0
Ig(REF)
0
Qg(5)
Qg(TH)
VGS = 5V
VGS = 10V
FIGURE 18. GATE CHARGE WAVEFORMS
6-16
5 Page | ||
| Páginas | Total 6 Páginas | |
| PDF Descargar | [ Datasheet RFD12N06RLESM.PDF ] | |
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