(PDF) RN2306 Datasheet - TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process)

Número de pieza	RN2306
Descripción	TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process)
Fabricantes	Toshiba Semiconductor
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No Preview Available ! RN2301~RN2306 TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process) RN2301,RN2302,RN2303 RN2304,RN2305,RN2306 Switching, Inverter Circuit, Interface Circuit And Driver Circuit Applications Unit: mm l With built-in bias resistors l Simplify circuit design l Reduce a quantity of parts and manufacturing process l Complementary to RN1301~1306 Equivalent Circuit Bias Resistor Values Type No. R1 (kΩ) RN2301 RN2302 RN2303 RN2304 RN2305 RN2306 4.7 10 22 47 2.2 4.7 R2 (kΩ) 4.7 10 22 47 47 47 Maximum Ratings (Ta = 25°C) Characteristic Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector power dissipation Junction temperature Storage temperature range RN2301~2306 RN2301~2304 RN2305, 2306 RN2301~2306 Symbol VCBO VCEO VEBO IC PC Tj Tstg Rating −50 −50 −10 −5 −100 100 150 −55~150 JEDEC EIAJ TOSHIBA Weight: 0.006g Unit V V V mA mW °C °C ― SC-70 2-2E1A 1 2001-06-07 1 page RN2301~RN2306 5 2001-06-07 5 Page

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PDF RN2306 Data sheet ( Hoja de datos )