(PDF) RN1441 Datasheet - TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process)

Número de pieza	RN1441
Descripción	TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process)
Fabricantes	Toshiba Semiconductor
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No Preview Available ! RN1441~RN1444 TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process) RN1441,RN1442,RN1443,RN1444 Muting And Switching Applications l High emitter-base voltage: VEBO = 25V (min) l High reverse hFE: reverse hFE = 150 (typ.) (VCE = −2V, IC = −4mA) l Low on resistance: RON = 1Ω (typ.) (IB = 5mA) l With built-in bias resistors l Simplify circuit design l Reduce a quantity of parts and manufacturing process Unit in mm Equivalent Circuit Maximum Ratings (Ta = 25°C) Characteristic Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector power dissipation Junction temperature Storage temperature range Symbol VCBO VCEO VEBO IC PC Tj Tstg JEDEC EIAJ TOSHIBA Weight: 0.012g TO-236MOD SC-59 2-3F1A Marking Rating 50 20 25 300 200 150 −55~150 Unit V V V mA mW °C °C Type No. RN1441 RN1442 RN1443 RN1444 HFE classification AB KA KB LA LB NA NB CA CB 1 2001-06-07 1 page RN1441~RN1444 5 2001-06-07 5 Page

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PDF RN1441 Data sheet ( Hoja de datos )