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PDF RMLA3565-58 Data sheet ( Hoja de datos )
| Número de pieza | RMLA3565-58 | |
| Descripción | Wideband Low Noise MMIC Amplifier | |
| Fabricantes | ETC | |
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RMLA3565-58
Wideband Low Noise MMIC Amplifier
Description
PRODUCT INFORMATION
The Raytheon RMLA3565-58 is a single bias wideband low noise MMIC amplifier that meets the following
specifications over the 3.5 - 6.5 GHz frequency range. The MMIC requires no external matching circuits no
external gate bias supply. This device uses Raytheon’s advanced 0.25 µm PHEMT process to provide low noise,
high linearity and low current.
Features
19.0 dB Gain Typical
1.5 dB Noise Figure, Typical 5.0 - 6.5 GHz
Single Positive Bias
Small Outline Metal Base Quad Plastic Package
Internal 50Ω Matching
Absolute
Maximum
Ratings1
Parameter
Positive Drain DC Voltage (No RF)
RF Input Power (from 50Ω source)
Drain Current
Case Operating Temperature
Storage Temperature Range
Soldering Temperature
Symbol
Vdd
Pin(CW)
Idd
Tc
Tstg
Tsolder
Value
6.5
0
130
-35 to 85
-40 to 110
220
Unit
V
dBm
mA
°C
°C
°C
Electrical
Characteristics2
Parameter
Min
Frequency Range
Gain (Small Signal)3,4
Gain Variation vs Temp
Noise Figure4
3.5 - 5 GHz
5 - 6.5 GHz
Power Out, P1dB @ 5.5 GHz
3.5
17.0
8.0
Typ
19.0
-0.008
1.4
1.5
10.0
Max Unit
6.5 GHz
dB
dB/°C
2.2 dB
1.6 dB
dBm
Parameter
OIP3 @ 5.5 GHz, +3 dBm
Pout total
Idd
Vdd
Input Return Loss
Output Return Loss
Thermal Resistance Rjc
(Channel to Case)
Min Typ Max Unit
17 21.0
dBm
70.0 85.0 mA
3.0 4.0 6.0 V
-15.0
dB
-10.0
dB
135 °C/W
www.raytheonrf.com
Notes:
1. No permanent damage with only one parameter set at maximum limit and all other parameters at typical conditions
2. All parameters met at Tc = +25 °C, Vdd = 4.0V
3. Pin = -20 dBm, Vdd = 4.0 V, Frequency 3.5 - 6.5 GHz
4. Data de-embedded from fixture loss
Characteristic performance data and specifications are subject to change without notice.
Revised March 28, 2002
Page 1
Raytheon RF Components
362 Lowell Street
Andover, MA 01810
1 page  
RMLA3565-58
Wideband Low Noise MMIC Amplifier
Performance
Data
20.5
PRODUCT INFORMATION
RMLA3565-58
Small Signal Gain (Tcase = 25°C) Vs Vdd and Frequency
20
19.5
19
18.5
18
3 Vdc
4 Vdc
17.5 5 Vdc
6 Vdc
17
3.5 4 4.5 5 5.5 6 6.5
Frequency (GHz)
RMLA3565-58
Small Signal Gain (Vdd = 4 Vdc) Vs Temperature and Frequency
20.5
20
19.5
19
18.5
www.raytheonrf.com
18
17.5
17
3.5 4 4.5 5 5.5
Frequency (GHz)
Characteristic performance data and specifications are subject to change without notice.
Revised March 28, 2002
Page 5
25 deg C
- 35 deg C
85 deg C
6 6.5
Raytheon RF Components
362 Lowell Street
Andover, MA 01810
5 Page | ||
| Páginas | Total 8 Páginas | |
| PDF Descargar | [ Datasheet RMLA3565-58.PDF ] | |
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