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PDF RM2Z Datasheet ( Hoja de datos )

Número de pieza RM2Z
Descripción SILICON RECTIFIER DIODES
Fabricantes EIC discrete Semiconductors 
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RM2Z Hoja de datos, Descripción, Manual
RM2 - RM2Z
SILICON RECTIFIER DIODES
PRV : 200 - 1000 Volts
Io : 1.2 Amperes
FEATURES :
* High current capability
* High surge current capability
* High reliability
* Low reverse current
* Low forward voltage drop
D2A
0.161 (4.1)
0.154 (3.9)
1.00 (25.4)
MIN.
0.284 (7.2)
0.268 (6.8)
MECHANICAL DATA :
* Case : D2A Molded plastic
* Epoxy : UL94V-O rate flame retardant
* Lead : Axial lead solderable per MIL-STD-202,
Method 208 guaranteed
* Polarity : Color band denotes cathode end
* Mounting position : Any
* Weight : 0.645 gram
0.040 (1.02)
0.0385 (0.98)
1.00 (25.4)
MIN.
Dimensions in inches and ( millimeters )
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Rating at 25 °C ambient temperature unless otherw ise specified.
Single phase, half w ave, 60 Hz, resistive or inductive load.
For capacitive load, derate current by 20%.
RATING
Maximum Repetitive Peak Reverse Voltage
Maximum RMS Voltage
Maximum DC Blocking Voltage
Maximum Average Forward Current
0.375"(9.5mm) Lead Length Ta = 70 °C
Peak Forward Surge Current
8.3ms Single half sine wave Superimposed
on rated load (JEDEC Method)
Maximum Forward Voltage at IF = 1.5 Amps.
Maximum DC Reverse Current
Ta = 25 °C
at rated DC Blocking Voltage
Ta = 100 °C
Typical Junction Capacitance (Note1)
Typical Thermal Resistance (Note2)
Junction Temperature Range
Storage Temperature Range
SYMBOL
VRRM
VRMS
VDC
RM2Z
200
140
200
RM2
400
280
400
RM2A
600
420
600
RM2B
800
560
800
RM2C
1000
700
1000
UNIT
Volts
Volts
Volts
IF 1.2 Amps.
IFSM
VF
IR
IR(H)
CJ
RθJA
TJ
TSTG
100
0.91
10
50
30
50
- 65 to + 175
- 65 to + 175
Amps.
Volts
µA
µA
pF
°C/W
°C
°C
Notes :
(1) Measured at 1.0 MHz and applied reverse voltage of 4.0VDC
(2) Thermal resistance from Junction to Ambient at 0.375" (9.5mm) Lead Lengths, P.C. Board Mounted.
UPDATE : MAY 27, 1998

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