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Número de pieza | RLP1N06CLE | |
Descripción | 1A/ 55V/ 0.750 Ohm/Voltage Clamping/ Current Limited/ N-Channel Power MOSFET | |
Fabricantes | Intersil Corporation | |
Logotipo | ||
Hay una vista previa y un enlace de descarga de RLP1N06CLE (archivo pdf) en la parte inferior de esta página. Total 7 Páginas | ||
No Preview Available ! Data Sheet
RLP1N06CLE
July 1999 File Number 2839.4
1A, 55V, 0.750 Ohm,Voltage Clamping,
Current Limited, N-Channel Power
MOSFET
The RLP1N06CLE is an intelligent monolithic power circuit
which incorporates a lateral bipolar transistor, resistors,
zener diodes, and a PowerMOS transistor. The current
limiting of this device allows it to be used safely in circuits
where it is anticipated that a shorted load condition may be
encountered. The drain to source voltage clamping offers
precision control of the circuit voltage when switching
inductive loads. Logic level gates allow this device to be fully
biased on with only 5V from gate to source. Input protection
is provided for ESD up to 2kV.
Formerly developmental type TA09880.
Ordering Information
PART NUMBER
PACKAGE
BRAND
RLP1N06CLE
TO-220AB
L1N06CLE
NOTE: When ordering, use the entire part number.
Features
• 1A, 55V
• rDS(ON) = 0.750Ω
• ILIMIT at 150oC = 1.1A to 1.5A Maximum
• Built-in Voltage Clamp
• Built-in Current Limiting
• ESD Protected, 2kV Minimum
• Controlled Switching Limits EMI and RFI
• 175oC Rated Junction Temperature
• Logic Level Gate
• Related Literature
- TB334 “Guidelines for Soldering Surface Mount
Components to PC Boards”
Symbol
D
G
Packaging
JEDEC TO-220AB
DRAIN (FLANGE)
SOURCE
DRAIN
GATE
S
6-428
CAUTION: These devices are sensitive to electrostatic discharge; follow proper ESD Handling Procedures.
http://www.intersil.com or 407-727-9207 | Copyright © Intersil Corporation 1999
1 page RLP1N06CLE
Typical Performance Curves Unless Otherwise Specified (Continued)
80 TJ = 175oC
RILθIMJC==14.3.157AoC/W
60
DUTY CYCLE = 20%
40
10%
5% 2%
20
50%
MAX PULSE WIDTH = 100ms
0
25 50 75 100 125 150
TA, AMBIENT TEMPERATURE (oC)
175
NOTE: Heatsink thermal resistance = 5oC/W
FIGURE 13. MAXIMUM VDS vs TA IN CURRENT LIMITING
80
MAX PULSE WIDTH = 100ms
TJ = 175oC
60 RILθIMJC==14.3.157AoC/W
5%
2% 1%
40
10%
20
DUTY CYCLE = 20%
50%
0
25 50 75 100 125 150
TA, AMBIENT TEMPERATURE (oC)
175
NOTE: Heatsink thermal resistance = 25oC/W
FIGURE 15. MAXIMUM VDS vs TA IN CURRENT LIMITING
10 RθJC =
4.17oC/W
8
STARTING
150oC 125oC 100oC 75oC 50oC TEMP = 25oC
6
80 TJ = 175oC
RILθIMJC==14.3.157AoC/W
60
40
DUTY CYCLE = 20%
20
50%
10%
5% 2%
MAX PULSE WIDTH = 100ms
0
25 50 75 100
125
TA, AMBIENT TEMPERATURE (oC)
150
175
NOTE: Heatsink thermal resistance = 10oC/W
FIGURE 14. MAXIMUM VDS vs TA IN CURRENT LIMITING
80
MAX PULSE WIDTH = 100ms
TJ = 175oC
60 RILθIMJA==18.305oAC/W
2% DUTY CYCLE = 1%
40
5%
20
10%
50%
0
25 50 75 100 125 150
TA, AMBIENT TEMPERATURE (oC)
175
NOTE: No external heatsink
FIGURE 16. MAXIMUM VDS vs TA IN CURRENT LIMITING
10 RθJC =
4.17oC/W
8
STARTING
150oC 125oC 100oC 75oC 50oC TEMP = 25oC
6
44
22
0
0 5 10 15 20 25
VDS, DRAIN TO SOURCE VOLTAGE (V)
NOTE: Heatsink thermal resistance = 2oC/W
Heatsink thermal capacitance = 4j/oC
FIGURE 17. TIME TO 175oC IN CURRENT LIMITING
6-432
0
0 5 10 15 20 25
VDS, DRAIN TO SOURCE VOLTAGE (V)
NOTE: Heatsink thermal resistance = 5oC/W
Heatsink thermal capacitance = 2j/oC
FIGURE 18. TIME TO 175oC IN CURRENT LIMITING
5 Page |
Páginas | Total 7 Páginas | |
PDF Descargar | [ Datasheet RLP1N06CLE.PDF ] |
Número de pieza | Descripción | Fabricantes |
RLP1N06CLE | 1A/ 55V/ 0.750 Ohm/Voltage Clamping/ Current Limited/ N-Channel Power MOSFET | Intersil Corporation |
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